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RFMD and Nujira will demonstrate the world's most efficient broadband power amplifier dseign for 4G base stations at Mobile World Congress in Barcelona, February 15-18, 2010. The design integrates the new RFMD RFG1M family of high-performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators. Using just one RFG1M device with a Coolteq.h module, the RFMD Nujira RF front end transmits over a 728-960 MHz band with over 50% efficiency, covering seven of the frequency bands defined for LTE by 3GPP.

RFMD Commences Pre-Production Shipments of High-Peformance Gallium Nitride (GaN)-Based CATV Hybrid Amplifiers to Major U.S.-Based Cable Television (CATV) Equipment Provider

RFMD has surpassed 25 million in units in shipments of its industry-leading RF71xx family of 2G dual-band and quad-band transmit modules. Shipments of the RF71xx family are expected to exceed 100 million units in calendar year 2010.

RFMD will supply the RF1130 single-pole 3-throw (SP3T) cellular switch into two upcoming CDMA models--a dual-band smartphone and a triple-band smartphone, both targeting the consumer smartphone market.

RFMD has received its first purchase order from a tier-one wireless base station OEM for the RFG1M09180 180-watt gallium nitride (GaN) broadband power transistor (BPT). This BPT features RFMD's state-of-the-art GaN process technology and is in support of the global expansion of 4G wireless networks.

RFMD(R) has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. Shipments of the RF3931 have commenced to multiple high power amplifier (HPA) manufacturers, and RFMD anticipates GaN shipments will increase significantly as new GaN products are introduced.

Designed for multiple CATV infrastructure applications, the CGA/CGR product portfolio of ultra-linear push-pull amplifiers delivers best-in-class composite second order (CSO) distortion performance and enables future DOCSIS®-compliant return path networks.

RFMD introduces the RFFC0085, a CMOS-based frequency converter integrated circuit (IC) that delivers optimal performance with low power consumption and low signal distortion. The RFFC0085 is designed for use as an out-of-band (OOB) receive circuit tuner in cable industry and SATCOM-DBS set-top boxes, DOCSIS® Set-Top Gateways, and a variety of other CATV applications.

The D10040200PL1 and D10040230PL1 from RFMD are innovative “green” GaN amplifiers that deliver the industry’s best low current performance. They are designed for use as power doubler amplifiers in current and next generation CATV infrastructure applications.

ZTE has selected two of RFMD's dual-band transmit modules to support ZTE's S305 GSM handset. The RF7166 and RF7167 are part of RFMD's RF71xx family of dual-band and quad-band transmit modules -- the Company's first platform of products featuring RFMD's innovative die-shrink technology.

RFMD has secured multiple high-volume design wins for the RF2815 GPS LNA module in support of various upcoming 3G smartphones and 3G data cards. The RF2815 is currently designed into 3G smartphones and 3G data cards manufactured by customers in China, Europe, Korea, North America, and Taiwan.

RFMD launches the new online store which offers new features and functionality designed to streamline the selection and ordering of samples and volume shipments.

RFMD successfully demonstrates industry-leading reliability performance with its high-power Gallium Nitride (GaN) process technology. Read the details.

RFMD is supporting the ramp of Samsung's Tocco Ultra Edition and GT-S8000 "Jet" 3G handsets with two of its ultra-compact WCDMA/HSDPA power amplifiers, the RF3267 and RF6266. These high-efficiency 3G front ends are designed to support the critical needs of multi-band, multimode 3G handsets and smartphones. Find out more.

RFMD's June quarterly revenue increased approximately 23.3% sequentially to $212.5 million. GAAP gross margin for the quarter increased sequentially from 17.3% to 34.8%, and non-GAAP gross margin increased sequentially from 19.8% to 37.0% during the same period. Learn more about RFMD's June 2009 Quarter results.

RFMD has entered into a cooperative agreement with the U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to develop a commercially viable and high volume-capable compound semiconductor-based process for high-peformance photovoltaic cells. Learn more about this exciting collaboration.

RFMD® announces the formation of its Gallium Nitride (GaN) Foundry Services business unit that will supply high-reliability, high-performance, and price-competitive GaN semiconductor technology into multiple RF power markets.

RFMD® expands its company portfolio to include four new high-isolation broadband symmetric RF switches designed to operate in multiple market segments. Read more about the RF3021, RF3023, RF3024, and RF3025.