Introduction and Process Technology
In the world of compound semiconductor manufacturing for RF applications, gallium arsenide (GaAs) makes up the largest subset. RFMD® is the world’s leading manufacturer of GaAs compound semiconductors. Our broad manufacturing resources enable us to deliver foundry services optimized to best meet our customers’ requirements for performance, cost, and time-to-market. Our flexible manufacturing processes and unlimited capacity also enable us to run our clients’ production orders 24 hours a day, 7 days a week.
Process Technology Offerings
| FD30 - GaAs High Power pHEMT |
FD25 - GaAs Low Noise pHEMT |
FET1H - GaAs Switching pHEMT |
- 0.3 μm power MMIC pHEMT process technology
- fT = 40 GHz
- Drain voltage up to 10 V
- Through wafer vias
- TaN precision resistors
- Capacitor densities of 100 and 550 pF/mm2
- Two interconnect metal layers—2.1 and 4.1μm of Au with air bridge crossovers
- Applications include X-band phased array PAs and 8-16 GHz wideband military EW jammers
- Process developed and manufactured in UK
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- 0.25 μm power MMIC pHEMT process technology
- fT = 50 GHz
- Drain voltage up to 7 V
- Through wafer vias
- TaN precision resistors
- Capacitor densities of 200, 390, and 780 pF/mm2
- Two interconnect metal layers—2.1 and 4.1 μm of Au with air bridge crossovers
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Provides low noise, medium power and high linearity for applications including
- Low noise front ends
- Transmitter MMICs
- Process developed and manufactured in UK
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- 0.6 μm switch pHEMT process technology
- Drain voltage up to 7 V
- Capacitor density of 295 pF/mm2
- Two interconnect metal layers—0.4 and 2.1 μm of Au with dielectric crossovers
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Provides low noise, high-linearity switching of RF signals for applications
- Wireless front ends
- Transmit/receive modules
- Phased arrays
- Process developed in Greensboro, NC
- Manufactured in Greensboro, NC, and UK
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