MBE Foundry Services

RFMD^® offers multiple molecular beam epitaxy (MBE) platforms, epi characterization, and experienced staffing to help develop your epitaxial structures. Epi development services include specialty and high-volume, arsenic and phosphorus-based processes.

Depending on your development requirements, we can help you design an epilayer structure and MBE process, as well as work with you to optimize the performance of your existing epistructure.

Material Offerings on GaAs Substrates

• Gallium arsenide (GaAs)
• Indium gallium arsenide (InGaAs)
• Aluminum gallium arsenide (AlGaAs)
• Indium gallium phosphide (InGaP)
• Aluminum indium phosphide (AlInP)

Growth Capabilities

• Available MBE systems include
  • Veeco Gen2K (7 x 6")
  • Riber R7000 (7 x 6")
  • Riber R6000 (4 x 6")
  • VG V100 (1 x 6")
• Low-temperature growth capability
• Flexible accommodation: 4" and 6" wafer sizes are standard
• In-situ monitoring for temperature, layer thickness and growth rate control
• Extensive characterization including Lehighton, Surfscan, Xray, Multifield Hall, Photoluminescence and AFM