Process Technology

RFMD GaN is production ready. It's a mature, robust technology with extraordinary reliability. Compared to GaAs and Si, RFMD GaN has much higher breakdown voltage and power densities, enabling applications not possible with competing technology. RFMD's GaN high power density also allows for smaller devices, reducing the capacitance while enabling high impedances, wider bandwidths, and reduced cost. Additional benefits include reduced circuit complexity, industry leading efficiency of operation, reduced cooling requirements, and lighter weight.


RFMD GaN: Multiple Efficiency Benefits

Size Comparison: GaN versus LDMOS

  

• Scale
  - RFMD Builds GaN in existing GaAs fabs
  - Scale-driven cost
• Linearity and Bandwidth
  - Improved performance
  - Especially Improved for LTE/WiMAX 
• Green
  - More power efficient per mW of RF power
• Power and Size
  - More RF power per mm²

• Operating Expenses/Capital Expenses
  - BOM and running costs reduced
  - Reduced total cost of ownership

RFMD GaN Features

      •  AlGaN/GaN on SiC substrate
          - Superior thermal conductivity
      •  Field plates for high breakdown voltage
          - Gate
          - Source coupled
      •  Ti/Al/Ni/Au ohmic contact
      •  Ni/Au Gate
      •  SiNx passivation

Parameter	Typical Value	Units
ldss	800	mA/mm
ld-max	900	mA/mm
Pak gm	225	mS/mm
Gate pinch off	-3.5	V
Vbr(GD)	>200	V

RFMD's GaN1C process is now available to external designers.

RFMD offers the leading GaN process for RF power devices operating below 6GHz.

Key features:

• 0.5 μ gate length HEMT transistor
• High power density (6 to 8W/mm CW)
• 200V breakdown voltage: operate at 48V CW or 65V pulsed.
• F_T = 11GHz, F_MAX = 18GHz
• High Efficiency: >65% demonstrated
• High Reliability: MTTF >10⁸ hours at T_CHANNEL = 150°C
• Excellent linearity and bandwidth

For a discussion of RFMD's robust technology roadmap and opportunities, contact our Foundry Services Team:   RFMDFoundryServices@rfmd.com