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Gallium Nitride (GaN) Technology

We are also commercializing the high-power amplifier process, Gallium Nitride (GaN), to develop extremely robust and highly efficient power transistors for base station applications. We recently introduced our GaN high-power transistor product family and are sampling to lead base station customers.

High power density, high voltage operation, higher reliability, and broadband performance are some of the intrinsic benefits to products developed utilizing Gallium Nitride (GaN) technology. RFMD is pursuing the development of GaN transistors for various high-volume commercial and defense oriented applications requiring greater performance than economically attainable with traditional GaAs technology. Through the utilization of this dedicated GaN capability, RFMD's vertically integrated development structure provides material processing, device fabrication and MMIC design expertise. This high-power semiconductor material affords RFMD a technological roadmap toward developing and producing next-generation power products to meet the stringent cost goals that the wireless infrastructure market demands. Click on the product announcement below to learn more.

Gallium Nitride (GaN) High-Power Transistors
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