rGaN-HV™ Power Conversion Devices

Overview

RFMD, a global leader in the design and manufacture of high-performance compound semiconductor components, leverages its industry-leading gallium nitride (GaN) technology and manufacturing capability to create innovative, high-power and high-performance GaN power semiconductor devices enabling substantial energy savings for a plethora of power conversion applications.

RFMD’s GaN manufacturing at a glance:

• One of the World’s Largest GaN Manufacturing Facilities
• In-House GaN Fab Located in Greensboro, NC
• Fully Qualified Processes Since 2009
• Proven Process Capability for GaN HEMT Devices Ranging up to 650V
• Ability to Provide 0.5μm GaN Custom Foundry Services for Both RF and Power Electronics Applications
• Best-in-Class Cycle Times and Excellent Customer Support

RFMD’s world-class research and development team extends its unmatched GaN capability with the development of a new high-voltage GaN-power technology platform known as rGaN-HV.

Why GaN for Power Conversion Applications?

GaN possesses many properties that make it an ideal material for power conversion devices. Its performance is substantially superior to silicon, and it is more cost effective than other compound power semiconductors such as silicon carbide.

• Wider Band Gap Reduces On-Resistance at High Voltage
• Higher Electron Mobility Enables Faster Switching
• High Temperature Capability for Improved Reliability
• Lower Cost — Can Be Grown on Silicon Substrates

GaN-based power devices can achieve a specific on-resistance that is 100 times lower than silicon super junction transistors and even 10 times lower than SiC transistors. This enables much smaller die size, lower output capacitance, higher efficiency, and faster switching — ultimately leading to major system cost savings and smaller board footprints.

rGaN-HV — a State-of-the-Art Process Technology

RFMD’s high-voltage GaN, rGaN-HV, encompasses a family of normally-off power switches to provide the first practical 600V GaN solution utilizing a HEMT (high electron mobility transistor) structure. The RFMD Source Switched FETs (SSFETs), housed in standard TO247 packages, will provide immediate efficiency improvements as a drop-in replacement for super junction transistors or IGBTs in a broad range of applications.

For more information on RFMD's rGaN-HV technology platform, contact RFMD Power Conversion Devices.