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Transistors

RFMD’s discrete transistors operate over a broad frequency range and offer high linearity for low noise and medium power applications.

Low Noise Discrete Transistors

Each low noise discrete transistor features a Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance.

Features

  • Frequency Range: 500MHz to 26000MHz
  • Low Noise and High Linearity over a Range of Bias Conditions
  • Balanced Configuration
  • 60% Power-Added Efficiency

Applications

  • High Intercept-Point LNAs
  • Wireless Infrastructure Systems
View RFMD's Low Noise Discrete Transistors

Linear Discrete Transistors

The linear discrete transistors are designed for operation from 50MHz to 6000MHz. They can be operated over a wide range of currents depending on the power and linearity requirements.

Features

  • Low Noise Figure
  • Low Current Consumption
  • PA Stage for Medium-Power Applications
  • Low Cost
  • High Drain Efficiency

Applications

  • Analog and Digital Wireless Systems
  • Cellular, Infrastructure
  • Fixed Wireless, Pager Systems
View RFMD's Linear Discrete Transistors
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Contact

RFMD® Corporate Headquarters & GaAs HBT Fabrication Facilities
7628 Thorndike Road
Greensboro, NC 27409-9421
Phone: 336.664.1233

Disclaimer

For important information regarding these materials including disclaimers regarding use in certain applications, see Standard Disclaimer for Product Documents

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