Skip to Page's Content Skip to Main Site Navigation Skip to Footer Links Skip to Site Utility Navigation
Title Image

Resource Center

The RFMD® Resource Center is the repository for an extensive collection of information created by RFMD experts. Here you’ll find app notes and white papers, presentations and technical articles, and a storehouse of tools and charts to make doing your job easier. Explore our up-to-the-minute releases, as well as tried-and-true resources that remain relevant.

Type Title / Description Published
Integrated 2.2 V RF Converter with Flexible Tuning Range Integrated 2.2 V RF Converter with Flexible Tuning Range
Microwave Journal takes a look at the RF2054 frequency converter.
Mar 2013
RF MMMB PA Options TDD & FDD LTE Global Roaming RF MMMB PA Options TDD & FDD LTE Global Roaming
RFMD’s 1st generation MMMB PA has been in production since 2011. RFMD’s 2nd generation MMMB PA will ramp at the end of this year. RFMD’s 3rd generation MMMB PA will sample in 1Q13. RFMD’s SB PAs for B40 & B41 and a 2.3 - 2.7GHz Multi-Band PA are bein More...
Nov 2012
Emerging RF Technologies for Smartphones and Connected Devices Emerging RF Technologies for Smartphones and Connected Devices
As we approach the new year, we have a much better idea of what market dynamics and resulting technologies will be driving handset RF developments in 2013. The most prominent RF-related technologies will be carrier aggregation (CA), envelope tracking More...
Nov 2012
Taming the Smartphone Power Consumption Vicious Cycle Taming the Smartphone Power Consumption Vicious Cycle
Cellular PA power conversion, cellular PA design architecture, and envelope tracking focus on reducing the cellular PA impact on smartphone power consumption.
Nov 2012
Wireless Trends to Look for at MWC 2013 Wireless Trends to Look for at MWC 2013
Microwave Journal outlines the trends and key technologies for GSMA Mobile World Congress 2013 in Barcelona.
Nov 2012
NF-NT Calculator NF-NT Calculator
Input noise and gain figures and calculate total system noise temperature.
Nov 2012
Bandpass Filter Response Bandpass Filter Response
Compute the ideal component values for the band pass filter when given the image impedance level, frequency, and desired Q.
Nov 2012
Resistive Attenuator Calculator Resistive Attenuator Calculator
Calculate a resistive PI and T attenuator networks for a given attenuation and characteristic impedance.
Nov 2012
Integrated Synthesizer/Mixer Application Note Matching Circuits and Baluns Integrated Synthesizer/Mixer Application Note Matching Circuits and Baluns
The RFFC207x and RFFC507x are monolithic mixer circuits with integrated frequency generation, a fractional-N synthesizer and VCO. The mixers are wideband and can be used for up and down conversion. The RFFC207x mixers cover the frequency range 30MHz More...
Nov 2012
A Highly Integrated 2.2V RF Frequency Converter with Flexible Tuning Range A Highly Integrated 2.2V RF Frequency Converter with Flexible Tuning Range
Frequency generation and conversion is at the heart of many modern communication systems. At its most basic level a frequency converter requires a low noise local oscillator with a phase locked loop and an up/down-conversion mixer. Excellent synthesi More...
Nov 2012
High Power GaN Solutions for Next Generation Radar High Power GaN Solutions for Next Generation Radar
GaN-on-SiC technology adoption continues for high power commercial and military radar applications. High efficiency GaN amplifiers provide robust, reliable solutions addressing need for more power in same footprint OR same power in smaller footprint More...
Oct 2012
The Autonomous Future The Autonomous Future
RFMD takes a look at today's autonomous devices and the possibilities for the future.
Oct 2012
VCA Broadband Linear Adjustment Challenges VCA Broadband Linear Adjustment Challenges
PIN diode-based RF attenuators have been the preferred method in the past to achieve voltage-variable RF gain, but they are often troublesome to design and require a large number of associated components. This article discusses the challenges and how More...
Oct 2012
An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier with > +51-dBm OIP3 An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier with > +51-dBm OIP3
This paper describes a GaN monolithic microwave integrated circuit (MMIC) cascode feedback amplifier design which achieves up to 8 W of output power and greater than +51 dBm OIP3 across a 250–3000-MHz decade bandwidth.
Oct 2012
Linear Power Amplifiers for Point-to-Point Radio Applications Linear Power Amplifiers for Point-to-Point Radio Applications
Microwave links in the range of 10 – 27 GHz are commonly used for point-to-point (P2P) connectivity. With the phenomenal increase of cell phone users and demand for high data rates, link traffic is getting congested. Since available channel bandwidt More...
Oct 2012
Broadband GaN MMICs: Multi-Octave Bandwidth PAs to Multi-Watt Linear LNAs Broadband GaN MMICs: Multi-Octave Bandwidth PAs to Multi-Watt Linear LNAs
Need: BW, Power, Linearity, PAE, Sensitivity, Survivability Broadband Application GaN Flavors (fT, Lg, BVdg, LN, Power Density) Broadband Amplifier Topology – Trades •Cascode FB •Darlington FB •Lossy Match •DA and NDPA Recent Results
Oct 2012
High Power GaN Solutions for Next Generation Radar High Power GaN Solutions for Next Generation Radar
GaN-on-SiC technology adoption continues for high power commercial and military radar applications. High efficiency GaN amplifiers provide robust, reliable solutions addressing need for more power in same footprint OR same power in smaller footprint. More...
Oct 2012
GaN High Power Amplifiers: Optimal Solutions Addressing Pico to Macro BTS Demands GaN High Power Amplifiers: Optimal Solutions Addressing Pico to Macro BTS Demands
Next Generation Products? • Linearity Optimized • Integration where beneficial • Size/Efficiency optimized for small cell designs • Higher Frequency Designs Why GaN? • High peak efficiency – Peak efficiency ~70% – Correlation with high power More...
Oct 2012
Thin-Film Lithium Niobate Contour-Mode Resonators Thin-Film Lithium Niobate Contour-Mode Resonators
•With the flexibility lithography-defined resonator geometry, we demonstrated multi-frequency resonators on a single chip •Two resonators at two different frequencies are demonstrated: 463MHz resonator: kt2*Qs = 105, Qs = 1500, kt2 = 7%; 750MHz reso More...
Oct 2012
Solutions for Next Generation WiFi Standards Solutions for Next Generation WiFi Standards
Progressing WiFi standards place new requirements on WiFi front ends. To address these new requirements, manufacturers are introducing new complete lineups of WiFi front end modules, PAs, switches, and LNAs. The front end products are compatible wi More...
Oct 2012
Insertion Tests and Model Simulation for RFSW2100 Insertion Tests and Model Simulation for RFSW2100
RFMD has many semiconductor switches that were designed as Tx/Rx switches for various radio systems. In these applications it is generally assumed that the switch presents little or no effect on the signal path other than a short line length with low More...
Sep 2012
Matching a 60 W GaN HEMT over 100–1000 MHz Bandwidth Matching a 60 W GaN HEMT over 100–1000 MHz Bandwidth
Emerging SDR architectures require wideband, high power amplifiers with high efficiency, compact size and low cost. GaN-on-SiC technology adoption continues for high power commercial and military applications. We’ve matched a 60W GaN HEMT over a 1 More...
Sep 2012
RFMD's GaN Power Amplifier Solutions RFMD's GaN Power Amplifier Solutions
GaN technology products are incresingly used in radar, aviation, cable TV, microwave, and civilian base stations.
Sep 2012
Isolation at High Input Power: SPDT Switch Comparison Isolation at High Input Power: SPDT Switch Comparison
With the increasing popularity of the LTE standard now prevalent across many of today's wireless service providers and developers, the demand for high-performance RF components is growing rapidly. LTE developers today seek to implement high-linearity More...
Sep 2012
Package Reliability Monitored Drop Shock and Temperature Cycling Testing Progression and Advantages Package Reliability Monitored Drop Shock and Temperature Cycling Testing Progression and Advantages
Package Reliability Monitored Drop Shock and Temperature Cycling Testing Progression and Advantages Evolution of RFMD Technology in Relation to Reliability Monitored Drop Shock Monitored TC Continued Trends
Sep 2012
Accurate Prediction of Thermal Resistance of FET by Detailed Modeling of Heat Generation and Backend Stackup Accurate Prediction of Thermal Resistance of FET by Detailed Modeling of Heat Generation and Backend Stackup
Joule Heating and FET structure Heat Distribution and Averaging Schemes Backend Topology Modeling FET3 FEA Model Results and Discussion •Effect of Various Heat Averaging Schemes •Effect of Backend Stackup Layers •Estimate Tj based on T_surf
Sep 2012
RFCM2680 PCB Thermal Design Requirements RFCM2680 PCB Thermal Design Requirements
The RFCM2680 is a power doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low n More...
Sep 2012
Small Cells and Backhaul Small Cells and Backhaul
RFMD's Gorden Cook shares his insight on small cells and the opportunities in this emerging market in the In My Opinion column.
Jul 2012
Boosting Battery Life Boosting Battery Life
The revolution in connectivity and mobility is driving a tidal wave of change through communication technologies worldwide along with tremendous technical challenges for the networks and mobile devices. The consumer demand for hand-held smart devices More...
Jul 2012
Make HFC Network Improvements a Reality Make HFC Network Improvements a Reality
Relatively new to CATV market, GaN-based hybrid amplifiers installed in HFC networks can provide up to twice the delivered RF power at lower distortion levels, with higher composite carrier-to-noise (CCN), and at 20% or lower power dissipation than a More...
Jul 2012
Wi-Fi – A Growing Technology Becomes Mainstream Wi-Fi – A Growing Technology Becomes Mainstream
Remember the first Wi-Fi wave in the late ’90s when Wi-Fi was growing as the new wireless conduit between laptop computers, the World Wide Web, and sometimes-secondary components such as printers? Initially meant for cashier systems, the first Wi-Fi More...
Jul 2012
RF6201EM357 Reference Design RF6201EM357 Reference Design
The RF6201EM357 reference design is a partnership between RFMD and Ember presenting a complete 2.4GHz IEEE 802.15.4-2003-compliant radio transceiver solution. Ember presents a fully integrated system-on-chip (SoC) with 32-bit ARM® CortexTM-M3 micropr More...
Jun 2012
GaN Low  Noise Broadband Amplifiers and Technology GaN Low Noise Broadband Amplifiers and Technology
Low Noise GaN HEMT Technology •Device Design •NF characteristics- NG •Survivability •Trends in Literature Broadband S-/C-band LNA Design •Wide-band Linear Applications •Design Topology Trades •Linear Cascode LNA example •Technology Compari More...
Jun 2012
Emerging Market Opportunities For GaN Emerging Market Opportunities For GaN
GaN-on-SiC technology adoption continues for high power commercial and military applications. High efficiency (GaN1) and high linearity (GaN2) transistor technologies developed for high peak power and high peak-to-average power operation. Superior More...
Jun 2012
Bias Optimized IP2 & IP3 Linearity and NF of a Decade-Bandwidth GaN MMIC Feedback Amplifier Bias Optimized IP2 & IP3 Linearity and NF of a Decade-Bandwidth GaN MMIC Feedback Amplifier
This work investigates the optimum NF, IP2, and IP3 bias of a GaN Cascode Amplifier
Jun 2012
A 50MHz-16GHz Low Distortion SOI Voltage Controlled Attenuator IC with IIP3 > +38dBm and Control Range of > 25dB A 50MHz-16GHz Low Distortion SOI Voltage Controlled Attenuator IC with IIP3 > +38dBm and Control Range of > 25dB
Broadband Voltage Controlled Attenuator •General Purpose and wideband up to 16GHz apps •Test equipment, military equipment, wideband apps •Very high linearity IIP3 > +38dBm •Attenuation range > 25dB •Temperature compensated •Linear in dB contro More...
Jun 2012
Multi-Octave Practical Power Amplifier Realization using GaN on SiC Multi-Octave Practical Power Amplifier Realization using GaN on SiC
Emerging SDR architectures require wideband, high power amplifiers with high efficiency, compact size and low cost. GaN-on-SiC technology adoption continues for high power commercial and military applications. Demonstrations include: •90W (dual d More...
Jun 2012
Design and Simulation of Integrated, High-Efficiency Power Amplifier Modules Design and Simulation of Integrated, High-Efficiency Power Amplifier Modules
Handset power amplifier design is challenged by continuous cost and size reduction. Part of cost reduction can be achieved by faster time to market and less design iterations. By using advanced design and simulation techniques, it is possible to achi More...
Jun 2012
Silicon-on-Insulator (SOI) Switches for Cellular and WLAN Front-End Applications Silicon-on-Insulator (SOI) Switches for Cellular and WLAN Front-End Applications
•3G / 4G smart handsets will dominate the market in the next few years, which opens a great opportunity for front-end suppliers. •High resistivity SOI enables FET stacking, allowing the design of high power antenna / mode switches. •Low RON*COFF pr More...
Jun 2012
High-Efficiency Cellular Power Amplifiers Based on a Modified LDMOS Process on Bulk Silicon and Silicon-On-Insulator Substrates With Integrated Power Management Circuitry High-Efficiency Cellular Power Amplifiers Based on a Modified LDMOS Process on Bulk Silicon and Silicon-On-Insulator Substrates With Integrated Power Management Circuitry
An RF high-voltage CMOS technology is presented for cost-effective monolithic integration of cellular RF transmit functions. The technology integrates a modified LDMOS RF power transistor capable of nearly comparable linear and saturated RF power More...
Jun 2012
GaN Powers High Speed Wireline Networks GaN Powers High Speed Wireline Networks
This article illustrates the wireline network specifications and requirements, describes how GaN die-based amplifiers solve operator needs,compares and quantifies GaN die-based solutions versus alternatives and provides a glimpse of future wireline n More...
Jun 2012
RF PA Options for 2.3-2.7 GHz LTE Bands RF PA Options for 2.3-2.7 GHz LTE Bands
RF suppliers are ready to support TD-LTE. Broadband 2.3-2.7GHz PAs are available to support Option #1 -or- Option #2. High isolation & Low Insertion Loss switches are available today. B7 PAs are available today. RF Industry has not fully standardized More...
Jun 2012
Broadband Lumped Package Modeling for Scaling Multi-Cell GaN HEMT Power Devices Broadband Lumped Package Modeling for Scaling Multi-Cell GaN HEMT Power Devices
The lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling b More...
Jun 2012
RFSA2524 RFSA2524
RFSA2524 is a MCM package 5-bit Digital Step Attenuator (DSA) that is capable of high linearity over the entire 31dB gain control range with excellent step accuracy in 1dB steps. The RFSA2524 has a serial control interface that is both 3V and 5V comp More...
May 2012
RFSA2514 RFSA2514
RFSA2514 is a MCM package 5-bit, 75 Digital Step Attenuator (DSA) that is capable of high linearity over the entire 15.5dB gain control range with excellent step accuracy in 0.5dB steps. The RFSA2514 is controlled by a serial control interface that More...
May 2012
RFMD Leverages RF GaN Capability to Build Power HEMTs RFMD Leverages RF GaN Capability to Build Power HEMTs
RFMD's Dan Schwob is interviewed about the company entering the power conversion arena with rGaN-HV at PCIM in Nuremberg in May.
May 2012
Transient Latch-up in Large NFET Switch Arrays Transient Latch-up in Large NFET Switch Arrays
Power management products are becoming increasingly common for handheld consumer products. These present unique problems in managing the snapback and subsequent failure of the large NMOS array. Two different mechanisms have been identified that are r More...
May 2012
dBm-to-Watts Conversion Chart dBm-to-Watts Conversion Chart
A table showing conversion values for dBm to Watts from 0dBm/1.0mW to 47dBm/50W.
May 2012
VSWR/Return Loss Conversion Chart VSWR/Return Loss Conversion Chart
A table showing conversion values for Return Loss to VSWR from 46.064dB/1.01 to 5.105dBm/3.50.
May 2012
Use of Knowledge Discovery from Manufacturing Data for Yield Improvement Use of Knowledge Discovery from Manufacturing Data for Yield Improvement
In order to quickly identify likely causes to manufacturing issues, a KDD approach should be taken to Assemble, Fix and Explore existing data. The output of the process can be fully automated for common issues. By using the KDD process at RFMD, many More...
Apr 2012
Repair and Maintenance in High-Volume MBE Production Repair and Maintenance in High-Volume MBE Production
Molecular beam epitaxy is a challenging technology to implement in a high-volume production environment. Maintenance of the complex systems and delicate components play a major role in the overall success of the MBE organization. This paper will More...
Apr 2012
Reduction in Production pHEMT Process Variation Due to MBE Rotational Effects Reduction in Production pHEMT Process Variation Due to MBE Rotational Effects
Continuous azimuthal rotation is one method of minimizing within run variation in MBE. In this work, we present data showing the effects of rotation rate on within run variation for production pHEMT wafers. Also included is a basic model for calc More...
Apr 2012
Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs
•Proposes a method of determining Safe Operating Area (SOA) of GaN Power Devices in a high voltage OFF-state. •Describes fundamental failure mode limiting OFF-state SOA. •Describes a new test method to safely extract failure times for device operat More...
Apr 2012
GaN: The Technology Of The Future GaN: The Technology Of The Future
Gallium nitride (GaN) has turned into the new industry buzzword. We hear of new products and application breakthroughs using GaN on a regular basis. GaN is unique compared to other technologies because it can not only be used to emit bright light via More...
Apr 2012
Rule Out Thermal Issues During Development Rule Out Thermal Issues During Development
Real-time monitored thermal-cycling techniques can improve reliability prediction for packaged modules.
Apr 2012
RFSA2654 RFSA2654
RFSA2654 is a MCM package 6-bit, 75Ω Digital Step Attenuator (DSA) that is capable of high linearity over the entire 31.5dB gain control range with excellent step accuracy in 0.5dB steps. The RFSA2654 is controlled by a serial control interface More...
Apr 2012
RFMD2014 RFMD2014
The RFMD2014 is direct quadrature modulator for use in cellular base stations and other communications systems. RFMD2014 supports cellular, 3G, WiMax, and LTE air interface standards. This device features operation from 1450MHz to 2700MHz with excell More...
Mar 2012
RF Front End Challenges for 3G/4G Wireless Handsets RF Front End Challenges for 3G/4G Wireless Handsets
RF Front End Challenges for 3G/4G Wireless Handsets
Mar 2012
ESD Solutions for Mature CMOS Technologies ESD Solutions for Mature CMOS Technologies
I.Introduction to the ESD Association II.Issues Facing the ESD Design Engineer in the Current Economy III.Case Studies I.ESD in Thin SOI II.ESD in “Noisy” Environments III.The “Middle Earth” of ESD Mitigation
Mar 2012
Tomorrow's RF Chips for Mobile Devices Tomorrow's RF Chips for Mobile Devices
• Increases in mobile data usage is driving new system efficiency expectations for RF components in handsets • New modulation schemes require more advanced power management to meet battery life expectations in mobile devices • Mobile devices must More...
Mar 2012
RFFM4202 in 11n Performance RFFM4202 in 11n Performance
RFMD's RFFM4202 is a newly developed, integrated PA, harmonic filter and high linearity SPDT switch FEM, in IEEE802.11n mode at the antenna port provides 27.5dBm linear output.
Mar 2012
Using Alternate Manufacturing Methods for Rapid Prototyping of Test Sockets Using Alternate Manufacturing Methods for Rapid Prototyping of Test Sockets
The need to create a unique test socket for limited use or an experimental socket comes up on occasion. Using rapid prototyping manufacturing methods a prototype socket can be designed and manufactured in as little as one day.
Mar 2012
Small-Signal Intermodulation Distortion in OFDM Transmission Systems Small-Signal Intermodulation Distortion in OFDM Transmission Systems
In the analysis of intermodulation distortion in OFDM systems, a simple third order model for the amplifier AM-AM distortion, which can be parameterized in terms of the amplifier linear gain and IP3, was employed in the evaluation of ACPR and EVM con More...
Mar 2012
GaN Output Matching Network Comparison GaN Output Matching Network Comparison
Fully matched GaN Power Transistors incorporate optimized matching networks that provide wideband power performance in a single amplifier and give the user high terminal impedances that allow for ease of use
Feb 2012
Broadband Reconfigurable Matching Network of Reduced
Dimensions for the UHF Military Satellite Communication Band Broadband Reconfigurable Matching Network of Reduced Dimensions for the UHF Military Satellite Communication Band
Good impedance match between transmitter and antenna is needed to maximize radiated power Antenna impedance varies significantly in portable equipment A reconfigurable matching network between the transmitter and the antenna can overcome this p More...
Feb 2012
DC/DC Converter Controlled Power Amplifier module for
WCDMA Applications DC/DC Converter Controlled Power Amplifier module for WCDMA Applications
Integrated PA module with DC/DC converter is demonstrated. Overall PA module size is 6x6mm. Closed loop type of power detector is presented. DC/DC buck converter controls VCC2 of PA. PAE has been improved from 8.6% to 16.8% @ 16dBm. PAE at peak power More...
Feb 2012
Defining Application Spaces for High Power GaN Defining Application Spaces for High Power GaN
Exploring the options for GaN • Value Proposition • Market Segments Product alignment • Timing is NOW! Data is REAL! • Enabling Wide Bandwidth • Enabling Very High Power • Enabling Future Infrastructure • Enabling High Efficiency
Feb 2012
An 8-Watt 250-3000 MHz Low Noise GaN Feedback Amplifier MMIC with > +50 dBm OIP3 An 8-Watt 250-3000 MHz Low Noise GaN Feedback Amplifier MMIC with > +50 dBm OIP3
Future GaN Trends, GaN Linear Applications. Demonstrates a new linearity benchmark for GaN MMIC LNAs.
Feb 2012
A Robust AlGaN/GaN HEMT Technology for RF Switching
Applications A Robust AlGaN/GaN HEMT Technology for RF Switching Applications
Advantages of GaN Materials for RF Switching Background on GaN reliability OFF-State Step Stress Experiment
Feb 2012
Amplifier RF Voltage and Current Calculations for Different Loading Conditions Amplifier RF Voltage and Current Calculations for Different Loading Conditions
In wireless applications, involving a variable antenna load at the amplifier output, the maximum RF voltage and current swings at the output of the amplifier and the antenna port need to be estimated in order to assess antenna interaction effects wit More...
Feb 2012
High Performance Front End Modules for Zigbee Applications High Performance Front End Modules for Zigbee Applications
RFMD has developed an extensive portfolio of high performance single-chip front end modules (FEMs) for AMI and other ZigBee® (802.15.4) applications to help address the global demand for Smart Energy solutions.
Feb 2012
RFSA2013 RFSA2013
The RFSA2013 is a 3mm × 3mm QFN package voltage controlled attenuator. This attenuator is ideal for cellular, 3G Infrastructure, WiBro, WiMax, LTE, Microwave Radio, and High Linearity Power Control. The RFSA2013 offers good attenuation operation vers More...
Feb 2012
RFSA2714 RFSA2714
RFSA2714 is a QFN package 7-bit Digital Step Attenuator (DSA) that is capable of high linearity over the entire 31.75dB gain control range with excellent step accuracy in 0.25dB steps. The RFSA2714 is parallel controlled and has an on-chip decoder th More...
Feb 2012
A 1mm Two Stage LNA and SP2T Switch RFIC FEM for WLAN 802.11a Application A 1mm Two Stage LNA and SP2T Switch RFIC FEM for WLAN 802.11a Application
Motivation: Low Cost, Low NF LNA for high band WLAN 4.9-5.85GHz Highly integrated MMIC single chip solution for PA/LNA/Switch Outline: pHEMT device Noise Figure FOM RFMD E/D-mode pHEMT Device Noise Figure Characteristics RF5540 LNA desi More...
Jan 2012
Push-Pull High IP2 Amplifiers Push-Pull High IP2 Amplifiers
With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain, VSWR, efficienc More...
Jan 2012
RFMD's GaN Portfolio Expands to Include High-Linearity, Broadband Power Amplifiers RFMD's GaN Portfolio Expands to Include High-Linearity, Broadband Power Amplifiers
In multi-channel communication systems where the PA linearity may be a primary figure of merit, RFMD’s RFHA3942 and RFHA3944 high-linearity, unmatched power transistors offer an optimized balance of linearity, drain efficiency, peak power and cost.
Jan 2012
GaN Switches Enable Hot Switching at Higher Power GaN Switches Enable Hot Switching at Higher Power
RF power control elements, such as RF switches, are an integral element of any RF system and traditionally have been built using Si PIN diodes for higher power applications and GaAs FETs for lower power and higher speed applications. The use of More...
Jan 2012
Point-To-Point: Creating Wireless Solutions For Future Backhaul Networks Point-To-Point: Creating Wireless Solutions For Future Backhaul Networks
The overwhelming popularity of mobile smart devices such as smartphones and tablets and their Web-based applications creates a significant increase in data traffic on wireless and wired networks. The increased presence and flexibility of these device More...
Jan 2012
Using the RFFC5072 as a 5.8GHz Signal Source Using the RFFC5072 as a 5.8GHz Signal Source
This application note describes how the RFFC5072 may be configured as a 5.8GHz signal source by using the second harmonic of the LO signal generated in the mixer. This involves setting the LO frequency to 2.9GHz, and using a 4.9GHz to 5.9GHz ISM band More...
Dec 2011
OEMs Share Their Accomplishments in 2011 & Predicitions for 2012 OEMs Share Their Accomplishments in 2011 & Predicitions for 2012
RFMD's David Schnaufer and Frank Stewart discuss the company's accomplishments in 2011 and predictions for 2012.
Dec 2011
Doherty Power Amplifier Design Doherty Power Amplifier Design
With high peak to average ratio signals in full use in the commercial world and expanding in the military world, how do we efficiently amplify these signals? Doherty is old news! PA suppliers are getting very nearly equal results. “Optimizations”/ More...
Nov 2011
Improving the Manufacturability of High-Power AlGaN-GaN HEMTs Using Statistical Analysis and Data Mining Techniques Improving the Manufacturability of High-Power AlGaN-GaN HEMTs Using Statistical Analysis and Data Mining Techniques
The advantages of GaN for High Power applications are well known: • High Breakdown Voltage, Wide Bandgap, High Thermal Conductivity with SiC substrates, High Current Density. • GaN based products have ramped in volume as industry became more comfor More...
Nov 2011
RFPA2013 RFPA2013
The RFPA2013 is a 0.5W QFN package power amplifier specifically designed for Wireless Infrastructure applications. The RFPA2013 is a single-stage GaAs HBT power amplifier offering ultra-linear operation at a comparably low DC power making it ideal fo More...
Nov 2011
RFGA2012 RFGA2012
The RFGA2012 is DFN package power linear amplifier specifically designed to achieve high OIP3. It offers ultra-linear performance at low DC power. The RFGA2012 features a VBIAS pin that enables users to optimize the quiescent current for specific re More...
Nov 2011
Wireless Data Connectivity with LTE Power Amplifiers Wireless Data Connectivity with LTE Power Amplifiers
RFMD has provided some background on LTE, specifically the downlink, and what it means to the PA designer. The LTE downlink signal has a high modulation bandwidth with many orthogonal carriers. This results in very high PAPR, and drives the entire P More...
Nov 2011
LTE PAs Offer Fast, Powerful Wireless Data Options LTE PAs Offer Fast, Powerful Wireless Data Options
Given the variety of LTE frequency bands, and the range of preferred power levels, RFMD has developed a family of LTE-compatible power amplifiers for data connectivity applications.
Nov 2011
The Internet Of Things: Connecting Everything, All The Time The Internet Of Things: Connecting Everything, All The Time
The evolution of technology has created a society in which we have round-the-clock access to information. We are connected to the Internet via laptops, tablets, or smartphones; having information readily available is now taken for granted. The inform More...
Nov 2011
Module Assembly Spacing Design Rule Improvement Study
for Flip Chip Device Applications Module Assembly Spacing Design Rule Improvement Study for Flip Chip Device Applications
1. Module package size reduction approaches 2. Test vehicle and considerations 3. Assembly for qualification and reliability
Nov 2011
A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications
Market Drivers • Improve battery life • Multi-standards for inter-operability • Wide-band architecture • Improve reliability • Leverage COTS components Why GaN? • Higher efficiency – Reduce heatsink requirements, smaller size – Increase ba More...
Oct 2011
A novel clamp based ESD protection structure for high power RF ports in GaAs pHEMT process A novel clamp based ESD protection structure for high power RF ports in GaAs pHEMT process
• ESD Protection Techniques • ESD for RFICs - GaAs and ESD • Conventional Diode Stack ESD Circuit • Dual pHEMT Clamp • Clamp Schematic and Working • Transmission Line Pulse Measurement • Clamp Capacitance • WiFi FEM - Measured Results
Oct 2011
Integrated Synthesizer/Mixer Matching Circuits and Baluns Integrated Synthesizer/Mixer Matching Circuits and Baluns
This document describes the implementation of baluns and matching circuits for the mixer ports of the RFFC207x and RFFC507x family of devices. The most suitable implementation will depend on the application and frequency plan. The trade-offs between More...
Jul 2011
An Efficient PA for Multiple Wireless Standards Applications An Efficient PA for Multiple Wireless Standards Applications
RF PAs are the key components in wireless communication systems. Strict performance requirements for output power and linearity must be met so that the wireless system complies with regulations. In addition, different systems have their own design re More...
Jul 2011
High Power & Wideband GaN RF Switch Technology High Power & Wideband GaN RF Switch Technology
RFMD Has Demonstrated RF switches w/ –Record Power Handling Capability –Wide Bandwidth Performance –Reliable Switch FET Technology
Jul 2011
VHF Doherty Amplifier with GaN FETs and Independent Drive-signal Control VHF Doherty Amplifier with GaN FETs and Independent Drive-signal Control
A VHG Doherty amplifier with independent drive-signal control is presented based upon a lumped-element design at which the PA #1 operates in class-B achieving and efficiency of 63% while the PA #2 is biased for class-C operation with an efficiency of More...
Jun 2011
RFFC507x Mixer Performance Above 4GHz RFFC507x Mixer Performance Above 4GHz
The RFFC5071/5072 datasheet contains test results for the RF mixers up to frequencies of 4GHz. This application note presents further test results for frequencies above 4GHz. The application circuits used on the mixer ports for these measurements are More...
Jun 2011
RFSA2013 and RFSA2023 Broadband High Performance Voltage-Controlled Attenuators RFSA2013 and RFSA2023 Broadband High Performance Voltage-Controlled Attenuators
The RFSA2013 (5V supply) and the RFSA2023 (3.3V supply) devices are elegant solutions to a voltage variable attenuation function in one very simple-to-use package.
Jun 2011
A Broadband High Dynamic Range Voltage ControlledAttenuator MMIC with IIP3 > +47dBm over Entire 30dB Analog Control Range A Broadband High Dynamic Range Voltage ControlledAttenuator MMIC with IIP3 > +47dBm over Entire 30dB Analog Control Range
Broadband Voltage Controlled Attenuator CATV & Wireless Infrastructure Bands Very high linearity IIP3 > +47dBm Attenuation range > 30dB Well controlled over PVT Linear in dB control Low Cost MMIC implementation Eliminate pin diodes Low Curre More...
Jun 2011
Advancements in GaN Technology Advancements in GaN Technology
GaN Benefits overview GaN Doherty Results GaN Drain Modulation
Jun 2011
RFPA2189 Typical Performance for Multiple Application Circuits RFPA2189 Typical Performance for Multiple Application Circuits
The RFPA2189 is a 0.5W SOT-89 power amplifier (PA) specifically designed for wireless infrastructure applications. It is a single- stage GaAs HBT PA offering ultra-linear operation at a comparably low DC power, making it ideal for next-generation ra More...
Jun 2011
RFPA0133 Typical Performance for a 698MHz to 794MHz Application Circuit RFPA0133 Typical Performance for a 698MHz to 794MHz Application Circuit
The RFPA0133 is a QFN, 16-Pin, 3mm x 3mm, 3V to 5V, high efficiency programmable gain amplifier manufactured on an advanced Gallium Arsenide Hetero-junction Bipolar Transistor (HBT) process. Ideal for analog communications systems, 900MHz spread spec More...
May 2011
Wideband GaN Power Amplifiers for Software-Defined Radios Wideband GaN Power Amplifiers for Software-Defined Radios
RFMD, using its leadership in the design and manufacture of multi-band power amplifiers for cellular handsets, has developed an advanced GaN process that facilitates development of next generation broadband power amplifiers for emerging applications More...
May 2011
RFMD208x Modulator Output Match RFMD208x Modulator Output Match
The RFMD2080 and RFMD2081 are IQ modulators with integrated fractional-N synthesizer and VCOs. The RF output range of the modulators is from 45MHz to 2700MHz. This application note gives information on the baluns and matching that can be implemented More...
May 2011
RFMD Front End Modules RFMD Front End Modules
Consumers of portable electronic devices are demanding longer battery life, longer connectivity range, and simultaneous operation of multiple functions. The need to multitaks is rapidly becoming one of the favorite features of portable devices and RF More...
Jan 2011
New RF Metrics for the Smartphone-Centered World New RF Metrics for the Smartphone-Centered World
A decade ago, “cell phones” were all about voice communication, an extension of the home phone for those who needed to be on the go. Today’s Smartphone-centered world finds that approach not nearly as relevant. Metrics from yesterday's cell phone pa More...
Jan 2011
GaN Comes of Age GaN Comes of Age
Gallium nitride (GaN) devices have been around for several years, but their impact on available high power amplifiers has only recently started to be felt. The importance of these devices on power amplifier technology is certain to grow and is alread More...
Dec 2010
PLL Synthesizer Programming PLL Synthesizer Programming
The Phase Locked Loop (PLL) Synthesizer is programmed via a 3-wire serial interface. There are three words that need to be transmitted to the unit. These are the Function word, the Reference Counter word and the AB-Counter word. This programming note More...
Dec 2010
Broadband Design Techniques and Technology for Future Wireless and Wireline Applications Broadband Design Techniques and Technology for Future Wireless and Wireline Applications
Evolution of the RF Darling Amplifer • Design Technology • New Technology 100 Gbps Fiber Optics Broadband Linear GaN Design • SDR LNA & PA • CATV amplifer
Nov 2010
Shielding RF Components at the Package Level Shielding RF Components at the Package Level
• Pros and cons of competing shielding techniques. • Test methods to determine best shielding techniques. • Integrated Plated Shield Technology is shaping microwave application requirements.
Nov 2010
Compact L- and S-Band GaN High Power Amplifiers Compact L- and S-Band GaN High Power Amplifiers
• Advantages and disadvantages of competing power amplifier technologies for radar applications. • GaN power amplifiers are shaping the future of radar. • Specific GaN solutions in production and proposed.
Nov 2010
Study of Grounding Schemes Utilized in Conformal Shielding Applications Study of Grounding Schemes Utilized in Conformal Shielding Applications
Comparison of shielding technologies. Discussion of laminate design. Description of testing and shielding performance.
Nov 2010
How Mobile Device Users are Impacting the Future of RF Front Ends How Mobile Device Users are Impacting the Future of RF Front Ends
In the last decade, cellular mobile devices have undergone dramatic changes. What began as a mobile phone simply used for people to talk or text with one another has now turned into a handheld device that provides multi-functionality such as a phone, More...
Nov 2010
A 0.1 – 1.8 GHz, 100 W GaN HEMT Power Amplifier Module A 0.1 – 1.8 GHz, 100 W GaN HEMT Power Amplifier Module
Emerging Software Defined Radio Architectures • Public Mobile Radio • Joint Tactical Radio Systems (JTRS) • Jamming Applications Requirements • Multi-decade10W and higher • High efficiency & compact size PAs critical for handheld / mobile uni More...
Oct 2010
Innovative Techniques for Shielding RF Components at the Package Level Innovative Techniques for Shielding RF Components at the Package Level
• Why integrate a shield in the module? • Shielding Techniques • Shielding Performance • Reliability
Sep 2010
Realizing Doherty Power Amplifier Designs Realizing Doherty Power Amplifier Designs
Doherty is old news! PA suppliers are getting very nearly equal results. “Optimizations”/“tweaks” are simply exploiting tradeoffs. Textbook Doherty Design Principles • Definition of Terms • The “Classic” Concept Empirical Doherty Design • Se More...
Sep 2010
Wideband Low Noise Amplifiers for 3.3 Volt Operation Wideband Low Noise Amplifiers for 3.3 Volt Operation
When designing a radio receiver, it is important to focus on low noise amplifier design in order to obtain the highest system performance. Critical system parameters such as dynamic range, sensitivity and strong signal handling are governed by the fi More...
Sep 2010
Low/Medium Power Channel Selective Repeater Application Low/Medium Power Channel Selective Repeater Application
A cellular repeater is a system of duplex reception, amplification, and transmission used to enhance uplink (UL) and downlink (DL) signals in areas of low radio coverage. This enhancement expands the coverage of cellular network base transceiver stat More...
Aug 2010
Multi-mode, Multi-band RF Front End Challenges and Solution Multi-mode, Multi-band RF Front End Challenges and Solution
• Future Device Market Drivers • Engineering Challenges for Multi-Mode, Multi-Band (MM/MB) • MM/MB Converged Solution • MM/MB Converged Performance
Jun 2010
Radio Front End for Enhanced Data Rate at Cell Edges Radio Front End for Enhanced Data Rate at Cell Edges
3G HSDPA/HSUPA Data rate at the edge of the cells are dropping much faster than expected versus the simulation done at the network planning side. What RF Front End architectures can be considered to help improve the data rate that a mobile user c More...
Jun 2010
Cellular Antenna Switches for Multimode Applications Based on a Silicon-On-Insulator (S-O-I) Technology Cellular Antenna Switches for Multimode Applications Based on a Silicon-On-Insulator (S-O-I) Technology
• Silicon-on-Insulator (SOI) for Antenna Switches • Design of High Order Switches on SOI • Small Signal Measurements • Harmonics and IMD Performance • Spurious Emissions
May 2010
RFMD’s RF2051 Offers Higher Levels of Integration for Diversity Radios RFMD’s RF2051 Offers Higher Levels of Integration for Diversity Radios
Diversity reception commonly used in wireless links are susceptible to multipath effects. Multipath is a common problem in urban or indoor environments where transmitted signal can reach the receive antenna after following a number of transmission pa More...
May 2010
An Efficient, UHF, Dual Band RF Power Amplifier Module on a 22 mm2 Footprint Designed in First Pass through Accurate Modeling and Simulation An Efficient, UHF, Dual Band RF Power Amplifier Module on a 22 mm2 Footprint Designed in First Pass through Accurate Modeling and Simulation
This paper describes the design, simulation, and experimental verification of an RF power amplifier (PA) module, implemented in gallium arsenide heterojunction bipolar transistor semiconductor technology (GaAs HBT). The PA module, which includes all More...
May 2010
GaN: Applications in RF Systems Beyond The PA GaN: Applications in RF Systems Beyond The PA
• Properties of GaN • System Challenges • System Advantages Afforded by GaN • GaN Components
Mar 2010
Winning at Whac-a-Mole: redesigning an RF transceiver Winning at Whac-a-Mole: redesigning an RF transceiver
A team from RFMD describes a design upgrade for one of the company’s devices, the ML5800 transceiver. The chip is used in cordless telephones and has sold more than 20 million units. The chip uses a two-port frequency shiſt keyed modulator, a relative More...
Mar 2010
Reducing RF205x Synthesizer Lock Time
Reducing RF205x Synthesizer Lock Time
Information required to reduce the lock time of the fractional-N synthesizer used in all of the RF205x family of integrated, configurable components.
Feb 2010
Comparison of Large-Signal-Network-Analyzer Calibrations Comparison of Large-Signal-Network-Analyzer Calibrations
We develop a procedure and metrics for comparing large-signal-network-analyzer calibrations. The metrics we develop provide a bound on differences between measurements obtained from large-signal-network-analyzer calibrations, as well as specific inf More...
Feb 2010
A Low-Noise Frequency Synthesizer for Infrastructure 
Applications A Low-Noise Frequency Synthesizer for Infrastructure Applications
Fully integrated synthesizer fabricated in 0.18um SiGe BiCMOS process using a switch-capacitor array for wideband tuning VCO phase noise of -134dBc/Hz at 600kHz CP is capable of having an output voltage in excess of 6V albeit the breakdown volt More...
Jan 2010
A 1mm flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications A 1mm flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications
Motivation • Customer demand is driving mobile handsets to be smaller while adding functionality, specifically WLAN radios • This requires the radio front ends to be much smaller in footprint area but still perform well Challenge • To design a More...
Jan 2010
RF MEMS Switch Technology for Radio Front End Applications RF MEMS Switch Technology for Radio Front End Applications
• Cellular system evolution • Tunable RF Front Ends • RFCMOS-on-SOI technology • RFMD MEMS Switch Technology • Measured DC / RF / Reliability Characteristics
Jan 2010
SGA-8343 GPS Application Circuits SGA-8343 GPS Application Circuits
RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS (Global Positioning System) frequency band (1575MHz). The first application circuit is optimi More...
Nov 2009
The Evolution and Importance of Composition in RF Compound Semiconductors The Evolution and Importance of Composition in RF Compound Semiconductors
• What is composition? • Where we started • MESFET to pHEMT • HBT born of composition and then improved • GaN HEMT – all about composition • SiGe, yes even for silicon
Oct 2009
RF2053 Phase Noise RF2053 Phase Noise
This application note presents phase noise results for the RF2053 for a narrowband / fixed LO application, and for an application requiring the VCO to tune over an octave range. The narrowband circuit uses an RFMD UMX-236-D16 VCO at 1660MHz. This VCO More...
Sep 2009
RF205x Family Matching Circuits and Baluns RF205x Family Matching Circuits and Baluns
This document describes the implementation of baluns and matching circuits for the mixer ports of the RF205x family of devices. The most suitable implementation will depend on the application and frequency plan. The trade offs between different imple More...
Sep 2009
CATV Hybrid Amplifier Modules: Past, Present, Future CATV Hybrid Amplifier Modules: Past, Present, Future
History of the Cable Industry. History of CATV Amplifiers and Hybrid Amplifiers. CATV Hybrid Amplifiers Today. What the Future Holds.
Jul 2009
Devices and Design Techniques for Advanced Handset / Mobile PAs Devices and Design Techniques for Advanced Handset / Mobile PAs
Highly Integrated Wireless Handset Front-End Modules Based on Bulk Silicon and Silicon-on-Insulator (SOI) Technologies • Technology Description • IPMOS (Integrated Power MOS) Device • SOI for Switch Enablement • IPMOS PAs and Integrated DC-DC Con More...
Jun 2009
Multi-Decade GaN Cascode-Distributed Power Amplifiers with Baseband Performance Multi-Decade GaN Cascode-Distributed Power Amplifiers with Baseband Performance
Demonstrates two GaN MMIC DA designs with base-band to 24 GHz -Conventional cascode DA -All-pass capacitively coupled cascode DA
Jun 2009
Extrinsic Parameter and Parasitic Elements in III-V HBT and HEMT Modeling Extrinsic Parameter and Parasitic Elements in III-V HBT and HEMT Modeling
• General modeling flow for single and multi-cell array device modeling • Analysis of test structures with corresponding calibration techniques • De-embedding • Methods for extrinsic parameter extraction used in HBT and pHEMT modeling • Parasitic More...
Jun 2009
AlGaN/GaN HFET Reliability AlGaN/GaN HFET Reliability
High-voltage AlGaN/GaN HFETs are undergoing rapid development and are proving to be excellent candidates for application in communications base station transmitters and as power amplifiers for use in radar transmitters from C-band up to W-band. Nitri More...
Jun 2009
FPM21500QFN 0.9GHz LNA Evaluation Board FPM21500QFN 0.9GHz LNA Evaluation Board
The data given above is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a balanced, dual biased, low noise amplifier. It is reactively matched at a frequency of 700 to 900 MHz. The active d More...
May 2009
Memory Effects Measure for Improved Digital Predistortion Tuning Memory Effects Measure for Improved Digital Predistortion Tuning
• APPD is not a “Silver Bullet” for DPD tuning • Neither is PAR • APPD does show some correlation to DPD ACP and with PAR can help guide the tuning • EVMrms shows potential worthy of follow-up • Captures both AM/AM and AM/PM
Apr 2009
SZA-5044 Biasing, VPC Selection, and Performance versus Supply Voltage SZA-5044 Biasing, VPC Selection, and Performance versus Supply Voltage
The SZA-5044 is a very flexible amplifier in terms of biasing. It can be run deep class AB for best efficiency and up to near class A for the best linearity. The power on/off control voltages are accessible for each of the three stages and nominal cu More...
Apr 2009
Self-shielded Quad-band EGPRS Transceiver with Spur Avoidance Self-shielded Quad-band EGPRS Transceiver with Spur Avoidance
The next generation of global system for mobile communications/EDGE large signal polar modulation transceivers from RF Micro Devices (RFMD), Greensboro, NC, is described. The transceiver is realized as a single die in 0.18- m CMOS. A very low interme More...
Apr 2009
A Custom III-V Heterojunction Bipolar Transistor Model A Custom III-V Heterojunction Bipolar Transistor Model
Communication systems today comprise the major use of GaAs technology with the highest volumes found in the cellular handset front-end. Here, heterojunction bipolar transistor (HBT) power amplifiers (PA) and Pseudomorphic High Electron Mobility Trans More...
Apr 2009
SZA-2044 Biasing, VPC Selection, and Performance versus Supply Voltage SZA-2044 Biasing, VPC Selection, and Performance versus Supply Voltage
The SZA-2044 is a very flexible amplifier in terms of biasing. It can run deep class AB for best efficiency and up to near class A for best linearity. The power on/off control voltages are accessible for each of the three stages and nominal currents More...
Mar 2009
FPM2750QFN 1.7GHz to 2.0GHz LNA Evaluation Board FPM2750QFN 1.7GHz to 2.0GHz LNA Evaluation Board
The data given above is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a balanced, dual biased, low noise amplifier. It is reactively matched at a frequency of 1700 to 2000 MHz. The active d More...
Mar 2009
FPD750SOT89 2.4GHz to 2.6GHz LNA Evaluation Board FPD750SOT89 2.4GHz to 2.6GHz LNA Evaluation Board
This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 2.4 to 2.6GHz. The active device is a Filtronic FPD750SOT89; a double-heterojunction, 750μm gate periphery PHEMT. The connectors are S More...
Mar 2009
FPM21500QFN 2.5GHz to 2.6 GHz LNA Evaluation Board FPM21500QFN 2.5GHz to 2.6 GHz LNA Evaluation Board
The data given above is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a balanced, dual biased, low noise amplifier. It is reactively matched at a frequency of 2500MHz to 2600MHz. The active More...
Mar 2009
3G/4G Multimode Cellular Front End Challenges Part 3: Impact on Power Amplifier Design 3G/4G Multimode Cellular Front End Challenges Part 3: Impact on Power Amplifier Design
Power amplifier background. Low Power Mode versus DC-DC converters: impact on battery current. Quadrature versus single-ended architectures.
Feb 2009
3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion 3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion
Multiple architecture options available to fill different design needs for 3G/4G cellular front ends. Mode-specific architectures optimized for performance. Converged multi-mode architectures optimized for smallest size, lowest cost of implementation More...
Feb 2009
A View from China (Editorial) A View from China (Editorial)
Opinion from RFMD General Manager
Feb 2009
Bias-Induced Memory Effects in UHF Wideband Power Amplifiers Bias-Induced Memory Effects in UHF Wideband Power Amplifiers
• Introduction to memory effects in RF power amplifiers • Causes of memory effects related to bias networks • Design of bias networks that minimize performance degradation due to memory effects • Practical and conceptual approach
Jan 2009
Next-generation GaN-based Power Amplifiers for Radar Applications Next-generation GaN-based Power Amplifiers for Radar Applications
Typical radar system implementations include weather observation, civilian air traffic control, high-resolution imaging along with various military radar applications such as ground penetration, ground and/or air surveillance, target tracking, and fi More...
Jan 2009
An Introduction to Broadband Impedance Transformation for RF Power Amplifiers An Introduction to Broadband Impedance Transformation for RF Power Amplifiers
Carrier spectrum is shaping cellular front end requirements. 3G band combination forecast for handsets and data cards is presented. Multimode, multi-band complexity will require innovation in front ends to meet performance and cost targets.
Jan 2009
200W GaN Broadband, Quick-Turn Doherty Amplifier 200W GaN Broadband, Quick-Turn Doherty Amplifier
• The Doherty configuration is the current “topology of choice” • Given enough time, one can optimize and trade gain and bandwidth for efficiency • Sometimes, the quickest solution is the best • Solid/robust amplifier design techniques combined wi More...
Dec 2008
FPM21500QFN 1.7GHz to 2.0GHz LNA Evaluation Board FPM21500QFN 1.7GHz to 2.0GHz LNA Evaluation Board
The data given above is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a balanced, dual biased, low noise amplifier. It is reactively matched at a frequency of 1700 to 2000 MHz. The active d More...
Dec 2008
SPB2026Z 800MHz to 960MHz Application Circuit SPB2026Z 800MHz to 960MHz Application Circuit
This application note is intended to provide a reference point for an amplifier circuit design using RFMD’s SPB-2026Z at 900MHz, having a bandwidth of approximately 160MHz.
Nov 2008
FPM2750QFN 2.5GHz to 2.6GHz LNA Evaluation Board FPM2750QFN 2.5GHz to 2.6GHz LNA Evaluation Board
The data given above is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a balanced, dual biased, low noise amplifier. It is reactively matched at a frequency of 2500 to 2600 MHz. The active d More...
Nov 2008
FPM2750QFN 0.9GHZ LNA Evaluation Board FPM2750QFN 0.9GHZ LNA Evaluation Board
The data given above is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a balanced, dual biased, low noise amplifier. It is reactively matched at a frequency of 700 to 900 MHz. The active dev More...
Nov 2008
FPD750SOT89 5.6GHZ LNA Evaluation Board FPD750SOT89 5.6GHZ LNA Evaluation Board
This evaluation board is a single-ended, dual biased, power amplifier. It has a distributed match with a frequency range of 5.15GHz to 5.85GHz. The active device is a Filtronic FPD750SOT89; a double-heterojunction, 750μm gate periphery PHEMT. The c More...
Nov 2008
FPD750SOT89 3.5GHZ LNA Evaluation Board FPD750SOT89 3.5GHZ LNA Evaluation Board
This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 3.4-3.6GHz. The active device is a Filtronic FPD750SOT89. A lower noise figure of 0.6dB can be achieved by biasing the device at 4V, 5 More...
Nov 2008
Challenges Facing Front Ends for 3G and 4G Multimode Handsets Challenges Facing Front Ends for 3G and 4G Multimode Handsets
As consumers, we are used to the continual productivity enhancements derived from having ever-increasing, computer-like handsets at our disposal. For those of us lucky enough to have indepth RF industry knowledge, we know full well the complexity of More...
Nov 2008
RF2051 WLAN Band Shift RF2051 WLAN Band Shift
The information presented here shows that the RF2051 works well in this application as a WLAN band shifter. The device is well-suited for band-shifting applications, containing the two mixers for up and down conversion as well as all of the local osc More...
Oct 2008
Wideband 400W Pulsed Power GaN HEMT Amplifiers Wideband 400W Pulsed Power GaN HEMT Amplifiers
RFMD has developed 400W pulsed output power GaN HEMT amplifiers operating over 2.9 – 3.5GHz band or 17% bandwidth. Under pulsed RF drive with 10% duty cycle and 100μs pulse width, the amplifier delivers output power in the range of 401 – 446 W over t More...
Oct 2008
A CMOS Fast Settling Time Low-Noise Low Dropout Regulator with Current Limiter A CMOS Fast Settling Time Low-Noise Low Dropout Regulator with Current Limiter
This paper presents a low-dropout regulator (LDO) for portable applications with current limiter. To minimize effect of bandgap noise, novel low pass filter associate with bandgap reference circuit, which provides highly filtered reference voltage an More...
Aug 2008
RC Clamps for “Noisy” Supply Rail Environments RC Clamps for “Noisy” Supply Rail Environments
A novel latch-enabled ESD clamp which incorporates feedback to enhance clamping and releasing capabilities is presented. In an ESD event, the RC trigger switches the clamp to a low-impedance state at which time the feedback circuit latches the clamp More...
Jul 2008
A Cool, Sub -0.2 dB Ultra-low, Noise Gallium Nitride Mulit-Octave MMIC LNA-PA with 2-Watt Output Power A Cool, Sub -0.2 dB Ultra-low, Noise Gallium Nitride Mulit-Octave MMIC LNA-PA with 2-Watt Output Power
This paper reports on a S-,C-band LNA-PA which achieves a sub-0.2dB noise figure over a multi-octave band and a PSAT of 2 Watts at a cooled temperature of -30ºC. The GaN MMIC is based on a 0.2um AlGaN/GaN-SiC HEMT technology with an fT ~ 75 GHz. At a More...
Jul 2008
Large-Signal Measurements for Power Amplifier (PA) Characterization Large-Signal Measurements for Power Amplifier (PA) Characterization
• Presented an evolution of different PA measurements from simple power sweeps to load/source-pull with modulated waveforms. • Demonstrated two principal uses of PA data for the system. • PA performance compliance. • PA modeling. • Showed the adv More...
Jun 2008
A New Level of Integration in RF Components (RF205x) A New Level of Integration in RF Components (RF205x)
By the title of this paper, one might assume that it is about to describe yet another system-on-a-chip (SOC) design, or even something beyond that. Not so. The intention is to describe a level of integration below that of an SOC, and explain why this More...
May 2008
Conformal Technology Delivers Breakthrough in RF Shielding (MicroShield) Conformal Technology Delivers Breakthrough in RF Shielding (MicroShield)
There are multiple ways components and modules can be shielded on printed circuit boards. Conformal shielding, labeled MicroShield, is a new technology that outperforms others by reducing radiated power significantly and minimizing EMI/RFI interferen More...
May 2008
HBT Modeling: Compact Modeling of III-V Heterojunction Bipolar Transistors for PA Applications HBT Modeling: Compact Modeling of III-V Heterojunction Bipolar Transistors for PA Applications
HBT Modeling: Compact Modeling of III-V Heterojunction Bipolar Transistors for PA Applications
Apr 2008
Innovation in Package-Level EMI/RF Shielding (MicroShield) Innovation in Package-Level EMI/RF Shielding (MicroShield)
With the trend towards smaller implementation sizes and higher functionality, older can shields may not always be the answer. Electromagnetic shielding is a common need in radio frequency/microwave applications; however, it is often an afterthought i More...
Mar 2008
Reliability Assessment of AlGaN/GaN HEMT Technology on SiC for 48V Applications Reliability Assessment of AlGaN/GaN HEMT Technology on SiC for 48V Applications
We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48V dc stress tests and using a failure criterion of 10% reduction in Idss, the 60% confidence interval on estimate of Ea was [2.00,2.94] eV and the pred More...
Feb 2008
Breakthrough in Conformal Self-Shielding of Electronic Packages  (MicroShield) Breakthrough in Conformal Self-Shielding of Electronic Packages (MicroShield)
Like it or not, electromagnetic shielding is a common need in radio frequency/microwave applications and, in an increasing number of cases, a requirement from the customer. Commonly, it is an afterthought in the design of electronic components. This More...
Jan 2008
RFMD® Low Noise Amplifiers Provide Broadband Performance for Multi-Market Applications RFMD® Low Noise Amplifiers Provide Broadband Performance for Multi-Market Applications
RFMD® introduces the first series of pHEMT LNAs to their MPG product offering. The RF386X series of LNAs, consisting of single-stage, dual-stage, and dual-channel architecture, provide users with a variety of design choices, broadband performance, an More...
Nov 2007
SGA-8543Z Amplifier Application Circuits SGA-8543Z Amplifier Application Circuits
SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits for the 880 MHz and 2440 MHz frequency bands.
Aug 2006
Open Loop Large Signal Polar Modulation for EDGE 8PSK Open Loop Large Signal Polar Modulation for EDGE 8PSK
Overview of the Polaris 2 transceiver architecture. Comparison of different modulation methods • IQ and small signal polar modulation • Open and closed loop large signal polar modulation Example performance results The next generation
Jun 2006
Modulation Trends and Key Specifications of Mobile
Transmitters Modulation Trends and Key Specifications of Mobile Transmitters
With the emergence of 3GPP digital standards for mobile communications, the battery power available to the mobile transmitter will be limited as the mobile phone will have to power MP3 players, higher resolution graphic displays and more powerful pr More...
Jun 2006
Handling of Unpackaged Die Handling of Unpackaged Die
Practices that should be followed when using handling unpackaged die.
Oct 2005
SXB-2089Z Amplifier Application Circuits SXB-2089Z Amplifier Application Circuits
SXB-2089 is a high high linearity InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) & 2140MHz (UMTS Band).
Jul 2005
SBB-2089 High CSO Push-Pull CATV Amplifier SBB-2089 High CSO Push-Pull CATV Amplifier
With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain, VSWR, efficienc More...
Jul 2005
SGL-0363 GPS Application Circuit SGL-0363 GPS Application Circuit
SGL-0363 is a high performance SiGe LNA designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS (Global Positioning System) frequency band (1575 MHz).
Jun 2005
Solder Reflow Recommendations Sn/Pb and Pb Free for Plastic RFICs Solder Reflow Recommendations Sn/Pb and Pb Free for Plastic RFICs
This application note will provide information about reflow profiles and document our recommended maximums for each phase of the reflow profile. It applies only to plastic encapsulated packages.
Sep 2004
Solder Reflow Recommendations Sn/Pb and Pb Free for Plastic RFICs Solder Reflow Recommendations Sn/Pb and Pb Free for Plastic RFICs
This application note will provide information about reflow profiles and document our recommended maximums for each phase of the reflow profile. It applies only to plastic encapsulated packages.
Sep 2004
STA-6033 Biasing, Vpc Selection and Performance vs Supply Voltage STA-6033 Biasing, Vpc Selection and Performance vs Supply Voltage
The STA-6033 is a very flexible amplifier in terms of biasing. It can be run deep class AB for best efficiency and up to near class A for the best linearity. This application note has targeted 802.11a and the circuits and biasing have been optimized More...
Aug 2004
SGA-8343 Amplifier Application Circuits SGA-8343 Amplifier Application Circuits
SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates several application circuits for key frequency bands in the 800-2500 MHz spectrum.
Jun 2003
Output Return Loss Of High Power Class AB Amplifiers Output Return Loss Of High Power Class AB Amplifiers
For a designer experienced at working with small signal, linear RF circuit design, moving to high frequency, high power, high efficiency power amplifier design might, initially, seem to be straight forward. Although many of the design criteria are co More...
Nov 2002
SGA-6589 Wideband (50-1000 MHz) Driver Circuit SGA-6589 Wideband (50-1000 MHz) Driver Circuit
New Silicon / Germanium amplifier gain blocks exhibit a combination of wide bandwidth, high gain,IP3 and low noise figure. The SGA6589 is a medium power gain block for which a versatile, wideband RF driver application circuit has been developed. More...
Jan 2002
Gain Block Active Bias Circuit Gain Block Active Bias Circuit
Gain Block amplifiers (SGA,NGA,SNA,SCA series) sometimes require power supply voltages very close to the rated device voltage. This provides a challenge to stabilize current with temperature and device-to-device bias voltage variations. A cost effect More...
Jan 2002
SGA-2486 Gain Flatness Compensation Circuit SGA-2486 Gain Flatness Compensation Circuit
New SiGe amplifier gain blocks exhibit a combination of wide bandwidth, high gain and IP3 with a low noise figure. This application note describes circuits that have been developed to improve gain flatness over a wide frequency range.
Jan 2002
Calculating Junction Temperature from Thermal Resistance Calculating Junction Temperature from Thermal Resistance
To illustrate the thermal resistance of a packaged power semiconductor device, the analogy of an electrical resistor network will be used. In the electrical resistor model the electrical resistance is defined by the potential difference (voltage) acr More...
Jan 2002
An ESD Overview, and Suggested Handling Precautions (Class 0 Devices) An ESD Overview, and Suggested Handling Precautions (Class 0 Devices)
Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity in our houses during the winter, when walking on the carpet causes static to build up on More...
Jan 2002
An ESD Overview, and Suggested Handling Precautions (Class 1A Devices) An ESD Overview, and Suggested Handling Precautions (Class 1A Devices)
Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity in our houses during the winter, when walking on the carpet causes static to build up on o More...
Jan 2002
An ESD Overview, and Suggested Handling Precautions (Class 1B Devices) An ESD Overview, and Suggested Handling Precautions (Class 1B Devices)
Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity in our houses during the winter, when walking on the carpet causes static to build up on o More...
Jan 2002
An ESD Overview, and Suggested Handling Precautions (Class 1C Devices) An ESD Overview, and Suggested Handling Precautions (Class 1C Devices)
Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity in our houses during the winter, when walking on the carpet causes static to build up on o More...
Jan 2002
An ESD Overview, and Suggested Handling Precautions (Class 2 Devices) An ESD Overview, and Suggested Handling Precautions (Class 2 Devices)
Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity in our houses during the winter, when walking on the carpet causes static to build up on o More...
Jan 2002
An ESD Overview, and Suggested Handling Precautions An ESD Overview, and Suggested Handling Precautions
Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity in our houses during the winter, when walking on the carpet causes static to build up on o More...
Jan 2002
A Direct Quadrature Modulator for 0.9 GHz to 2.5 GHz Wireless Systems A Direct Quadrature Modulator for 0.9 GHz to 2.5 GHz Wireless Systems
The RF2422 direct quadrature modulator fills an important gap in 2GHz wireless systems. Direct modulation up to 2.5GHz is now possible with a proven chip that can greatly simplify a wireless transmitter. The RF2422 packs numerous discrete functions i More...
Aug 1994
RFMD® Corporate Headquarters & GaAs HBT Fabrication Facilities7628 Thorndike RoadGreensboro, NC 27409-9421
Main Phone: 336.664.1233
Customer Service: 336.678.5570
Copyright © RFMD : Legal Statement
Follow Us
Friend on FacebookFollow on TwitterFollow on Google PlusConnect on LinkedInView on YouTube
RF Micro Devices
We'd welcome your feedback!

Thank you for visiting our website. We are redesigning our website and you have been selected to participate in a brief survey to let us know how we can improve your experience.

The survey is designed to measure your entire experience on our web site. The survey results will be used to improve the site.