RF Micro Devices :: RF Solutions & Wireless Communication Technology

Resource Center - Presentations

The RFMD^® Resource Center is the repository for an extensive collection of information created by RFMD experts. Here you’ll find app notes and white papers, presentations and technical articles, and a storehouse of tools and charts to make doing your job easier. Explore our up-to-the-minute releases, as well as tried-and-true resources that remain relevant.

RFMD Presentations highlight high-level data, trends, and research.

Type	Title / Description	Published
	RF MMMB PA Options TDD & FDD LTE Global Roaming RFMD’s 1st generation MMMB PA has been in production since 2011. RFMD’s 2nd generation MMMB PA will ramp at the end of this year. RFMD’s 3rd generation MMMB PA will sample in 1Q13. RFMD’s SB PAs for B40 & B41 and a 2.3 - 2.7GHz Multi-Band PA are bein More...	Nov 2012
	High Power GaN Solutions for Next Generation Radar GaN-on-SiC technology adoption continues for high power commercial and military radar applications. High efficiency GaN amplifiers provide robust, reliable solutions addressing need for more power in same footprint OR same power in smaller footprint More...	Oct 2012
	Broadband GaN MMICs: Multi-Octave Bandwidth PAs to Multi-Watt Linear LNAs Need: BW, Power, Linearity, PAE, Sensitivity, Survivability Broadband Application GaN Flavors (fT, Lg, BVdg, LN, Power Density) Broadband Amplifier Topology – Trades •Cascode FB •Darlington FB •Lossy Match •DA and NDPA Recent Results	Oct 2012
	High Power GaN Solutions for Next Generation Radar GaN-on-SiC technology adoption continues for high power commercial and military radar applications. High efficiency GaN amplifiers provide robust, reliable solutions addressing need for more power in same footprint OR same power in smaller footprint. More...	Oct 2012
	GaN High Power Amplifiers: Optimal Solutions Addressing Pico to Macro BTS Demands Next Generation Products? • Linearity Optimized • Integration where beneficial • Size/Efficiency optimized for small cell designs • Higher Frequency Designs Why GaN? • High peak efficiency – Peak efficiency ~70% – Correlation with high power More...	Oct 2012
	Thin-Film Lithium Niobate Contour-Mode Resonators •With the flexibility lithography-defined resonator geometry, we demonstrated multi-frequency resonators on a single chip •Two resonators at two different frequencies are demonstrated: 463MHz resonator: kt2*Qs = 105, Qs = 1500, kt2 = 7%; 750MHz reso More...	Oct 2012
	Matching a 60 W GaN HEMT over 100–1000 MHz Bandwidth Emerging SDR architectures require wideband, high power amplifiers with high efficiency, compact size and low cost. GaN-on-SiC technology adoption continues for high power commercial and military applications. We’ve matched a 60W GaN HEMT over a 1 More...	Sep 2012
	Package Reliability Monitored Drop Shock and Temperature Cycling Testing Progression and Advantages Package Reliability Monitored Drop Shock and Temperature Cycling Testing Progression and Advantages Evolution of RFMD Technology in Relation to Reliability Monitored Drop Shock Monitored TC Continued Trends	Sep 2012
	Accurate Prediction of Thermal Resistance of FET by Detailed Modeling of Heat Generation and Backend Stackup Joule Heating and FET structure Heat Distribution and Averaging Schemes Backend Topology Modeling FET3 FEA Model Results and Discussion •Effect of Various Heat Averaging Schemes •Effect of Backend Stackup Layers •Estimate Tj based on T_surf	Sep 2012
	GaN Low Noise Broadband Amplifiers and Technology Low Noise GaN HEMT Technology •Device Design •NF characteristics- NG •Survivability •Trends in Literature Broadband S-/C-band LNA Design •Wide-band Linear Applications •Design Topology Trades •Linear Cascode LNA example •Technology Compari More...	Jun 2012
	Emerging Market Opportunities For GaN GaN-on-SiC technology adoption continues for high power commercial and military applications. High efficiency (GaN1) and high linearity (GaN2) transistor technologies developed for high peak power and high peak-to-average power operation. Superior More...	Jun 2012
	Bias Optimized IP2 & IP3 Linearity and NF of a Decade-Bandwidth GaN MMIC Feedback Amplifier This work investigates the optimum NF, IP2, and IP3 bias of a GaN Cascode Amplifier	Jun 2012
	A 50MHz-16GHz Low Distortion SOI Voltage Controlled Attenuator IC with IIP3 > +38dBm and Control Range of > 25dB Broadband Voltage Controlled Attenuator •General Purpose and wideband up to 16GHz apps •Test equipment, military equipment, wideband apps •Very high linearity IIP3 > +38dBm •Attenuation range > 25dB •Temperature compensated •Linear in dB contro More...	Jun 2012
	Multi-Octave Practical Power Amplifier Realization using GaN on SiC Emerging SDR architectures require wideband, high power amplifiers with high efficiency, compact size and low cost. GaN-on-SiC technology adoption continues for high power commercial and military applications. Demonstrations include: •90W (dual d More...	Jun 2012
	Design and Simulation of Integrated, High-Efficiency Power Amplifier Modules Handset power amplifier design is challenged by continuous cost and size reduction. Part of cost reduction can be achieved by faster time to market and less design iterations. By using advanced design and simulation techniques, it is possible to achi More...	Jun 2012
	Silicon-on-Insulator (SOI) Switches for Cellular and WLAN Front-End Applications •3G / 4G smart handsets will dominate the market in the next few years, which opens a great opportunity for front-end suppliers. •High resistivity SOI enables FET stacking, allowing the design of high power antenna / mode switches. •Low RON*COFF pr More...	Jun 2012
	RF PA Options for 2.3-2.7 GHz LTE Bands RF suppliers are ready to support TD-LTE. Broadband 2.3-2.7GHz PAs are available to support Option #1 -or- Option #2. High isolation & Low Insertion Loss switches are available today. B7 PAs are available today. RF Industry has not fully standardized More...	Jun 2012
	Broadband Lumped Package Modeling for Scaling Multi-Cell GaN HEMT Power Devices The lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling b More...	Jun 2012
	Transient Latch-up in Large NFET Switch Arrays Power management products are becoming increasingly common for handheld consumer products. These present unique problems in managing the snapback and subsequent failure of the large NMOS array. Two different mechanisms have been identified that are r More...	May 2012
	Use of Knowledge Discovery from Manufacturing Data for Yield Improvement In order to quickly identify likely causes to manufacturing issues, a KDD approach should be taken to Assemble, Fix and Explore existing data. The output of the process can be fully automated for common issues. By using the KDD process at RFMD, many More...	Apr 2012
	Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs •Proposes a method of determining Safe Operating Area (SOA) of GaN Power Devices in a high voltage OFF-state. •Describes fundamental failure mode limiting OFF-state SOA. •Describes a new test method to safely extract failure times for device operat More...	Apr 2012
	RF Front End Challenges for 3G/4G Wireless Handsets RF Front End Challenges for 3G/4G Wireless Handsets	Mar 2012
	ESD Solutions for Mature CMOS Technologies I.Introduction to the ESD Association II.Issues Facing the ESD Design Engineer in the Current Economy III.Case Studies I.ESD in Thin SOI II.ESD in “Noisy” Environments III.The “Middle Earth” of ESD Mitigation	Mar 2012
	Tomorrow's RF Chips for Mobile Devices • Increases in mobile data usage is driving new system efficiency expectations for RF components in handsets • New modulation schemes require more advanced power management to meet battery life expectations in mobile devices • Mobile devices must More...	Mar 2012
	Using Alternate Manufacturing Methods for Rapid Prototyping of Test Sockets The need to create a unique test socket for limited use or an experimental socket comes up on occasion. Using rapid prototyping manufacturing methods a prototype socket can be designed and manufactured in as little as one day.	Mar 2012
	GaN Output Matching Network Comparison Fully matched GaN Power Transistors incorporate optimized matching networks that provide wideband power performance in a single amplifier and give the user high terminal impedances that allow for ease of use	Feb 2012
	Broadband Reconfigurable Matching Network of Reduced Dimensions for the UHF Military Satellite Communication Band Good impedance match between transmitter and antenna is needed to maximize radiated power Antenna impedance varies significantly in portable equipment A reconfigurable matching network between the transmitter and the antenna can overcome this p More...	Feb 2012
	DC/DC Converter Controlled Power Amplifier module for WCDMA Applications Integrated PA module with DC/DC converter is demonstrated. Overall PA module size is 6x6mm. Closed loop type of power detector is presented. DC/DC buck converter controls VCC2 of PA. PAE has been improved from 8.6% to 16.8% @ 16dBm. PAE at peak power More...	Feb 2012
	Defining Application Spaces for High Power GaN Exploring the options for GaN • Value Proposition • Market Segments Product alignment • Timing is NOW! Data is REAL! • Enabling Wide Bandwidth • Enabling Very High Power • Enabling Future Infrastructure • Enabling High Efficiency	Feb 2012
	An 8-Watt 250-3000 MHz Low Noise GaN Feedback Amplifier MMIC with > +50 dBm OIP3 Future GaN Trends, GaN Linear Applications. Demonstrates a new linearity benchmark for GaN MMIC LNAs.	Feb 2012
	A Robust AlGaN/GaN HEMT Technology for RF Switching Applications Advantages of GaN Materials for RF Switching Background on GaN reliability OFF-State Step Stress Experiment	Feb 2012
	A 1mm Two Stage LNA and SP2T Switch RFIC FEM for WLAN 802.11a Application Motivation: Low Cost, Low NF LNA for high band WLAN 4.9-5.85GHz Highly integrated MMIC single chip solution for PA/LNA/Switch Outline: pHEMT device Noise Figure FOM RFMD E/D-mode pHEMT Device Noise Figure Characteristics RF5540 LNA desi More...	Jan 2012
	Doherty Power Amplifier Design With high peak to average ratio signals in full use in the commercial world and expanding in the military world, how do we efficiently amplify these signals? Doherty is old news! PA suppliers are getting very nearly equal results. “Optimizations”/ More...	Nov 2011
	Improving the Manufacturability of High-Power AlGaN-GaN HEMTs Using Statistical Analysis and Data Mining Techniques The advantages of GaN for High Power applications are well known: • High Breakdown Voltage, Wide Bandgap, High Thermal Conductivity with SiC substrates, High Current Density. • GaN based products have ramped in volume as industry became more comfor More...	Nov 2011
	Module Assembly Spacing Design Rule Improvement Study for Flip Chip Device Applications 1. Module package size reduction approaches 2. Test vehicle and considerations 3. Assembly for qualification and reliability	Nov 2011
	A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications Market Drivers • Improve battery life • Multi-standards for inter-operability • Wide-band architecture • Improve reliability • Leverage COTS components Why GaN? • Higher efficiency – Reduce heatsink requirements, smaller size – Increase ba More...	Oct 2011
	A novel clamp based ESD protection structure for high power RF ports in GaAs pHEMT process • ESD Protection Techniques • ESD for RFICs - GaAs and ESD • Conventional Diode Stack ESD Circuit • Dual pHEMT Clamp • Clamp Schematic and Working • Transmission Line Pulse Measurement • Clamp Capacitance • WiFi FEM - Measured Results	Oct 2011
	High Power & Wideband GaN RF Switch Technology RFMD Has Demonstrated RF switches w/ –Record Power Handling Capability –Wide Bandwidth Performance –Reliable Switch FET Technology	Jul 2011
	VHF Doherty Amplifier with GaN FETs and Independent Drive-signal Control A VHG Doherty amplifier with independent drive-signal control is presented based upon a lumped-element design at which the PA #1 operates in class-B achieving and efficiency of 63% while the PA #2 is biased for class-C operation with an efficiency of More...	Jun 2011
	A Broadband High Dynamic Range Voltage ControlledAttenuator MMIC with IIP3 > +47dBm over Entire 30dB Analog Control Range Broadband Voltage Controlled Attenuator CATV & Wireless Infrastructure Bands Very high linearity IIP3 > +47dBm Attenuation range > 30dB Well controlled over PVT Linear in dB control Low Cost MMIC implementation Eliminate pin diodes Low Curre More...	Jun 2011
	Advancements in GaN Technology GaN Benefits overview GaN Doherty Results GaN Drain Modulation	Jun 2011
	Broadband Design Techniques and Technology for Future Wireless and Wireline Applications Evolution of the RF Darling Amplifer • Design Technology • New Technology 100 Gbps Fiber Optics Broadband Linear GaN Design • SDR LNA & PA • CATV amplifer	Nov 2010
	Study of Grounding Schemes Utilized in Conformal Shielding Applications Comparison of shielding technologies. Discussion of laminate design. Description of testing and shielding performance.	Nov 2010
	A 0.1 – 1.8 GHz, 100 W GaN HEMT Power Amplifier Module Emerging Software Defined Radio Architectures • Public Mobile Radio • Joint Tactical Radio Systems (JTRS) • Jamming Applications Requirements • Multi-decade10W and higher • High efficiency & compact size PAs critical for handheld / mobile uni More...	Oct 2010
	Innovative Techniques for Shielding RF Components at the Package Level • Why integrate a shield in the module? • Shielding Techniques • Shielding Performance • Reliability	Sep 2010
	Realizing Doherty Power Amplifier Designs Doherty is old news! PA suppliers are getting very nearly equal results. “Optimizations”/“tweaks” are simply exploiting tradeoffs. Textbook Doherty Design Principles • Definition of Terms • The “Classic” Concept Empirical Doherty Design • Se More...	Sep 2010
	Multi-mode, Multi-band RF Front End Challenges and Solution • Future Device Market Drivers • Engineering Challenges for Multi-Mode, Multi-Band (MM/MB) • MM/MB Converged Solution • MM/MB Converged Performance	Jun 2010
	Radio Front End for Enhanced Data Rate at Cell Edges 3G HSDPA/HSUPA Data rate at the edge of the cells are dropping much faster than expected versus the simulation done at the network planning side. What RF Front End architectures can be considered to help improve the data rate that a mobile user c More...	Jun 2010
	Cellular Antenna Switches for Multimode Applications Based on a Silicon-On-Insulator (S-O-I) Technology • Silicon-on-Insulator (SOI) for Antenna Switches • Design of High Order Switches on SOI • Small Signal Measurements • Harmonics and IMD Performance • Spurious Emissions	May 2010
	GaN: Applications in RF Systems Beyond The PA • Properties of GaN • System Challenges • System Advantages Afforded by GaN • GaN Components	Mar 2010
	A Low-Noise Frequency Synthesizer for Infrastructure Applications Fully integrated synthesizer fabricated in 0.18um SiGe BiCMOS process using a switch-capacitor array for wideband tuning VCO phase noise of -134dBc/Hz at 600kHz CP is capable of having an output voltage in excess of 6V albeit the breakdown volt More...	Jan 2010
	A 1mm flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications Motivation • Customer demand is driving mobile handsets to be smaller while adding functionality, specifically WLAN radios • This requires the radio front ends to be much smaller in footprint area but still perform well Challenge • To design a More...	Jan 2010
	RF MEMS Switch Technology for Radio Front End Applications • Cellular system evolution • Tunable RF Front Ends • RFCMOS-on-SOI technology • RFMD MEMS Switch Technology • Measured DC / RF / Reliability Characteristics	Jan 2010
	The Evolution and Importance of Composition in RF Compound Semiconductors • What is composition? • Where we started • MESFET to pHEMT • HBT born of composition and then improved • GaN HEMT – all about composition • SiGe, yes even for silicon	Oct 2009
	Devices and Design Techniques for Advanced Handset / Mobile PAs Highly Integrated Wireless Handset Front-End Modules Based on Bulk Silicon and Silicon-on-Insulator (SOI) Technologies • Technology Description • IPMOS (Integrated Power MOS) Device • SOI for Switch Enablement • IPMOS PAs and Integrated DC-DC Con More...	Jun 2009
	Multi-Decade GaN Cascode-Distributed Power Amplifiers with Baseband Performance Demonstrates two GaN MMIC DA designs with base-band to 24 GHz -Conventional cascode DA -All-pass capacitively coupled cascode DA	Jun 2009
	Extrinsic Parameter and Parasitic Elements in III-V HBT and HEMT Modeling • General modeling flow for single and multi-cell array device modeling • Analysis of test structures with corresponding calibration techniques • De-embedding • Methods for extrinsic parameter extraction used in HBT and pHEMT modeling • Parasitic More...	Jun 2009
	Memory Effects Measure for Improved Digital Predistortion Tuning • APPD is not a “Silver Bullet” for DPD tuning • Neither is PAR • APPD does show some correlation to DPD ACP and with PAR can help guide the tuning • EVMrms shows potential worthy of follow-up • Captures both AM/AM and AM/PM	Apr 2009
	Bias-Induced Memory Effects in UHF Wideband Power Amplifiers • Introduction to memory effects in RF power amplifiers • Causes of memory effects related to bias networks • Design of bias networks that minimize performance degradation due to memory effects • Practical and conceptual approach	Jan 2009
	200W GaN Broadband, Quick-Turn Doherty Amplifier • The Doherty configuration is the current “topology of choice” • Given enough time, one can optimize and trade gain and bandwidth for efficiency • Sometimes, the quickest solution is the best • Solid/robust amplifier design techniques combined wi More...	Dec 2008
	RC Clamps for “Noisy” Supply Rail Environments A novel latch-enabled ESD clamp which incorporates feedback to enhance clamping and releasing capabilities is presented. In an ESD event, the RC trigger switches the clamp to a low-impedance state at which time the feedback circuit latches the clamp More...	Jul 2008
	Large-Signal Measurements for Power Amplifier (PA) Characterization • Presented an evolution of different PA measurements from simple power sweeps to load/source-pull with modulated waveforms. • Demonstrated two principal uses of PA data for the system. • PA performance compliance. • PA modeling. • Showed the adv More...	Jun 2008
	Open Loop Large Signal Polar Modulation for EDGE 8PSK Overview of the Polaris 2 transceiver architecture. Comparison of different modulation methods • IQ and small signal polar modulation • Open and closed loop large signal polar modulation Example performance results The next generation	Jun 2006
	Modulation Trends and Key Specifications of Mobile Transmitters With the emergence of 3GPP digital standards for mobile communications, the battery power available to the mobile transmitter will be limited as the mobile phone will have to power MP3 players, higher resolution graphic displays and more powerful pr More...	Jun 2006