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Resource Center - White Papers

The RFMD® Resource Center is the repository for an extensive collection of information created by RFMD experts. Here you’ll find app notes and white papers, presentations and technical articles, and a storehouse of tools and charts to make doing your job easier. Explore our up-to-the-minute releases, as well as tried-and-true resources that remain relevant.

RFMD White Papers provide exclusive information on our processes and products.

Type Title / Description Published
Repair and Maintenance in High-Volume MBE Production Repair and Maintenance in High-Volume MBE Production
Molecular beam epitaxy is a challenging technology to implement in a high-volume production environment. Maintenance of the complex systems and delicate components play a major role in the overall success of the MBE organization. This paper will More...
Apr 2012
Reduction in Production pHEMT Process Variation Due to MBE Rotational Effects Reduction in Production pHEMT Process Variation Due to MBE Rotational Effects
Continuous azimuthal rotation is one method of minimizing within run variation in MBE. In this work, we present data showing the effects of rotation rate on within run variation for production pHEMT wafers. Also included is a basic model for calc More...
Apr 2012
Shielding RF Components at the Package Level Shielding RF Components at the Package Level
• Pros and cons of competing shielding techniques. • Test methods to determine best shielding techniques. • Integrated Plated Shield Technology is shaping microwave application requirements.
Nov 2010
Compact L- and S-Band GaN High Power Amplifiers Compact L- and S-Band GaN High Power Amplifiers
• Advantages and disadvantages of competing power amplifier technologies for radar applications. • GaN power amplifiers are shaping the future of radar. • Specific GaN solutions in production and proposed.
Nov 2010
CATV Hybrid Amplifier Modules: Past, Present, Future CATV Hybrid Amplifier Modules: Past, Present, Future
History of the Cable Industry. History of CATV Amplifiers and Hybrid Amplifiers. CATV Hybrid Amplifiers Today. What the Future Holds.
Jul 2009
3G/4G Multimode Cellular Front End Challenges Part 3: Impact on Power Amplifier Design 3G/4G Multimode Cellular Front End Challenges Part 3: Impact on Power Amplifier Design
Power amplifier background. Low Power Mode versus DC-DC converters: impact on battery current. Quadrature versus single-ended architectures.
Feb 2009
3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion 3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion
Multiple architecture options available to fill different design needs for 3G/4G cellular front ends. Mode-specific architectures optimized for performance. Converged multi-mode architectures optimized for smallest size, lowest cost of implementation More...
Feb 2009
Challenges Facing Front Ends for 3G and 4G Multimode Handsets Challenges Facing Front Ends for 3G and 4G Multimode Handsets
As consumers, we are used to the continual productivity enhancements derived from having ever-increasing, computer-like handsets at our disposal. For those of us lucky enough to have indepth RF industry knowledge, we know full well the complexity of More...
Nov 2008
A CMOS Fast Settling Time Low-Noise Low Dropout Regulator with Current Limiter A CMOS Fast Settling Time Low-Noise Low Dropout Regulator with Current Limiter
This paper presents a low-dropout regulator (LDO) for portable applications with current limiter. To minimize effect of bandgap noise, novel low pass filter associate with bandgap reference circuit, which provides highly filtered reference voltage an More...
Aug 2008
A Cool, Sub -0.2 dB Ultra-low, Noise Gallium Nitride Mulit-Octave MMIC LNA-PA with 2-Watt Output Power A Cool, Sub -0.2 dB Ultra-low, Noise Gallium Nitride Mulit-Octave MMIC LNA-PA with 2-Watt Output Power
This paper reports on a S-,C-band LNA-PA which achieves a sub-0.2dB noise figure over a multi-octave band and a PSAT of 2 Watts at a cooled temperature of -30ºC. The GaN MMIC is based on a 0.2um AlGaN/GaN-SiC HEMT technology with an fT ~ 75 GHz. At a More...
Jul 2008
Reliability Assessment of AlGaN/GaN HEMT Technology on SiC for 48V Applications Reliability Assessment of AlGaN/GaN HEMT Technology on SiC for 48V Applications
We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48V dc stress tests and using a failure criterion of 10% reduction in Idss, the 60% confidence interval on estimate of Ea was [2.00,2.94] eV and the pred More...
Feb 2008
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