High power density, high voltage operation, higher reliability, and broadband performance are some of the intrinsic benefits to products developed utilizing Gallium Nitride (GaN) technology. RFMD® is pursuing the development of GaN transistors for various high-volume commercial and defense oriented applications requiring greater performance than economically attainable with traditional GaAs technology. Through the utilization of this dedicated GaN capability, RFMD' vertically integrated development structure provides material processing, device fabrication and MMIC design expertise. This high-power semiconductor material affords RFMD a technological roadmap toward developing and producing next-generation power products to meet the stringent cost goals that the wireless infrastructure market demands.

Gallium Nitride (GaN) High-Power Transistors
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