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Introduction

RFMD® develops and manufactures unmatched compound semiconductor technologies and offers foundry services for our industry-leading 0.5μm GaN on SiC process technologies. RFMD's world-class manufacturing scale - supported by the largest III-V factory in the world - enables best-in-class cycle times backed by our on-time shipment pledge. RFMD's track record as a high-volume, reliable supplier has earned us "preferred partner" status with the industry's top OEMs while our extraordinary level of customer service continues to set us apart from the competition.

RFMD GaN: Multiple Benefits

  • Linearity and Bandwidth
    • Improved performance
    • Especially Improved for LTE/WiMAX 
  • Green
    • More power efficient per mW of RF power
  • Power and Size
    • More RF power per mm2
  • Operating Expenses/Capital Expenses
    • BOM and running costs reduced
    • Reduced total cost of ownership

RFMD GaN versus Other Semiconductor Materials

  • RFMD's GaN wide bandgap allows for higher breakdown voltages and operation at high temperatures.
  • High thermal conductivity of SiC makes it a better substrate than silicon for power amplifier applications that require good heat sinking.
  • Saturated electron velocity of RFMD GaN is much higher than GaAs or silicon, allowing operation at high frequencies.
Characteristic Unit
Semiconductor (typical materials)
Silicon Gallium Arsenide Indium Phosphide Silicon Carbide Gallium Nitride
Bandgap eV 1.1 1.42 1.35 3.26 3.49
Electron mobility at 300°K cm2/Vs 1500 8500 5400 700 1000-2000
Saturated electron velocity X107 cm/s 1 1.3 1 2 2.5
Critical breakdown field MV/cm 0.3 0.4 0.5 3 3.3
Thermal conductivity W/cm°K 1.5 0.5 0.7 4.5 >1.5
Relative dielectric constant εR 11.8 12.8 12.5 10 9

Applications Benefiting from RFMD GaN Technology

  • Wireless Infrastructure
  • Broadband Communications
  • Defense Communications and Systems
  • CATV Distribution
  • SATCOM
 

Foundry Services

RFMD GaN Foundry Services Brochure Thumbnail
GaN Foundry Services Brochure
Contact

RFMD® Corporate Headquarters & GaAs HBT Fabrication Facilities
7628 Thorndike Road
Greensboro, NC 27409-9421
Phone: 336.664.1233

Disclaimer

For important information regarding these materials including disclaimers regarding use in certain applications, see Standard Disclaimer for Product Documents

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