Introduction
RFMD® develops and manufactures unmatched compound semiconductor technologies and offers foundry services for our industry-leading 0.5μm GaN on SiC process technologies. RFMD's world-class manufacturing scale - supported by the largest III-V factory in the world - enables best-in-class cycle times backed by our on-time shipment pledge. RFMD's track record as a high-volume, reliable supplier has earned us "preferred partner" status with the industry's top OEMs while our extraordinary level of customer service continues to set us apart from the competition.
RFMD GaN: Multiple Benefits
- Linearity and Bandwidth
- Improved performance
- Especially Improved for LTE/WiMAX
- Green
- More power efficient per mW of RF power
- Power and Size
- Operating Expenses/Capital Expenses
- BOM and running costs reduced
- Reduced total cost of ownership
RFMD GaN versus Other Semiconductor Materials
- RFMD's GaN wide bandgap allows for higher breakdown voltages and operation at high temperatures.
- High thermal conductivity of SiC makes it a better substrate than silicon for power amplifier applications that require good heat sinking.
- Saturated electron velocity of RFMD GaN is much higher than GaAs or silicon, allowing operation at high frequencies.
| Characteristic |
Unit |
| Semiconductor (typical materials) |
| Silicon |
Gallium Arsenide |
Indium Phosphide |
Silicon Carbide |
Gallium Nitride |
|
| Bandgap |
eV |
1.1 |
1.42 |
1.35 |
3.26 |
3.49 |
| Electron mobility at 300°K |
cm2/Vs |
1500 |
8500 |
5400 |
700 |
1000-2000 |
| Saturated electron velocity |
X107 cm/s |
1 |
1.3 |
1 |
2 |
2.5 |
| Critical breakdown field |
MV/cm |
0.3 |
0.4 |
0.5 |
3 |
3.3 |
| Thermal conductivity |
W/cm°K |
1.5 |
0.5 |
0.7 |
4.5 |
>1.5 |
| Relative dielectric constant |
εR |
11.8 |
12.8 |
12.5 |
10 |
9 |
Applications Benefiting from RFMD GaN Technology
- Wireless Infrastructure
- Broadband Communications
- Defense Communications and Systems
- CATV Distribution
- SATCOM