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RFMD® is currently sampling the RF386X series of single & two-stage pHEMT Low-Noise-Amplifiers (LNA's).  Targeting production release in Q207, RFMD has optimized this high-performance array of broadband LNA's for the NMT, GSM, CDMA, UMTS, EDGE and WiMAX air interface standards.  Preliminary Datasheets, bulk samples, and evaluation boards are available now.

RFMD uses its manufacturing capacity, design expertise and broad technology base to manufacture a wide array of RFIC products for base station applications and small signal devices for the wireless infrastructure market.


Expertise in Multiple Process Technologies and Our Exclusive Optimum Technology Matching® Strategy

Our broad technology base provides expertise in GaAs HBT, SiGe, silicon CMOS, silicon BiCMOS, GaAs MESFET, InGaP HBT, GaAs pHEMT and GaN HEMT process technologies that address a wide range of applications. Our design expertise in these process technologies drives our exclusive Optimum Technology Matching® (OTM) strategy. Through OTM, our engineers match the appropriate process technology and device technology to each product according to the best possible combination of price and performance.

Our ability to match process technologies with products to drive value while lowering cost serves as a key differentiator for RFMD in the infrastructure marketplace. The markets RFMD


Components for Base Station Infrastructure

From gain blocks, pre-drivers and drivers to direct modulators and demodulators, as well as power transistors and modules, we have a component to meet customers' base station transceiver requirements. Our design engineers pay special attention to thermal performance and reliability to ensure our products meet tough industry standards.


Direct Conversion Base Station Transceiver
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Superheterodyne Base Station Transceiver
click on blocks for more information

 

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