Featured Products
RF393X
RFMD introduces the RF393X family of 48V gallium nitride (GaN) power transistors. Offering enhanced performance from 10W to 120W and very wide tunable bandwidth, this portfolio of 48V GaN transistors demonstrates the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.
RFMD’s RF393X product family is comprised of five 48V GaN unmatched power transistors, each of which delivers gain in the range of 14dB to 16dB and high peak drain efficiency of greater than 65 percent at 2.1GHz. The superior performance characteristics of RFMD’s GaN power transistors make them ideal for wideband, high efficiency power amplifier applications, such as broadcast television, wireless infrastructure, high power radar, aerospace and avionics.
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RF386X
RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700MHz to 3800MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions. These new broadband LNAs are ideally suited for wireless networks, including cellular, WLAN and WiMAX infrastructure.
Designed for first stage low noise and linear driver amplification targeting CDMA, PCS, DCS, UMTS, WLAN and WiMAX applications, the LNAs are offered in a variety of configurations - single stage, dual stage and dual channel. Each LNA is internally matched, giving network designers maximum flexibility with minimal external biasing, thereby simplifying design requirements and accelerating time-to-market. Each RF386X LNA is also contained in a low-cost, industry-standard QFN package.
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RF3861 Product Information Page
RF3863 Product Information Page
RF3865 Product Information Page
RF3866 Product Information Page
RF3867 Product Information Page
GaAS
pHEMT Low-Noise Amplifiers Flyer
RF3822
RFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications. The RF3822 provides high output power with constant gain, excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Operating in the 100MHz to 1000MHz frequency bands, this 10-watt device greatly enhances the bandwidth of software-defined radios (SDRs) for military communications. RFMD’s RF3822 GaN PA, contained in a surface mountable aluminum nitride package, which is footprint compatible with industry standard SOIC-8, is optimized for high efficiency over a very wide operating bandwidth in a 50 ohm impedance environment.
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RF3159
The RF3159 is a high linearity quad-band GSM/GPRS/EDGE PA designed to support EDGE transceivers utilizing a linear transmit architecture. The RF3159 PA module is fully matched for easy implementation and is housed in a small 6x6mm package, which is industry-leading for the linear EDGE PA market.
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RF3198
The RF3198 PowerStar™ PA module provides ease of implementation and optimized performance to manufacturers of dual-band handsets for the growing entry level and replacement markets. The improved isolation, harmonic performance and cross-band coupling of the RF3198 reduce RF complexity and increase design flexibility related to antenna and switch selection. Additionally, these improvements simplify calibration and increase manufacturing yields, thereby accelerating time to market and reducing total cost of ownership.
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RF3198 Product Information Page
RF3161
The high level of integration of the RF3161, combined with its industry-leading 6x6 mm package, deliver the smallest EDGE power amplifier solution in its class. By limiting the number of external components and eliminating external routing during customer implementation, the RF3161 reduces manufacturers’ total bill of materials costs and reduces time to market.
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RF3161 Product Information Page
RF3203
The RF3203 builds upon RFMD’s leadership in linear EDGE power amplifiers by integrating switch functionality and adding PowerStar II power control technology. PowerStar II technology improves system efficiency at rated power and delivers improved TRP performance. The RF3203 reduces the output power variation in a 3:1 antenna mismatch to ±1dB and reduces the current variation by 50%.
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RF3203 Product Information Page
RF3196
The RF3196 power amplifier module includes state-of-the-art power flattening technology, VBAT tracking and RFMD’s patented PowerStar® technology to provide a complete power control system. The improved TRP and SAR performance of the RF3196 reduces current variation by 50% into non-ideal (3:1) loads (also known as “antenna mismatch”). The RF3196 is pin-for-pin compatible with RFMD’s high-volume RF3166 PowerStar power amplifier module, thus providing an easy migration path for customers seeking improved TRP and SAR performance in handsets.
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RF3196 Product Information Page
POLARIS(TM) 3 TOTAL RADIO(TM)
The POLARIS(TM) 3 TOTAL RADIO(TM) Transceiver Solution integrates full quad-band GPRS/EDGE RF transmit/receive paths, the transmit switch, receive SAW filters and associated matching components in a TOTAL RADIO implementation that optimizes all combined functions - from antenna to baseband - for improved transmit efficiency and increased receive sensitivity. The TOTAL RADIO implementation of POLARIS 3 eliminates the sourcing and placement of external RF components, which greatly reduces RF complexity, lowers platform implementation costs and improves overall handset performance. POLARIS 3 also leverages RFMD's next-generation open-loop, large signal polar modulation architecture, which is the industry's most efficient transmit architecture. When combined with the optional DC to DC converter (announced separately today), POLARIS 3 offers additional improvements in backed off efficiency and optimizes energy consumption over an extended battery voltage discharge profile.
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RF628x
The RF628x family of products provides a UMTS transmit system for the implementation of multi-region multimode 3G handset platforms. RFMD’s UMTS transmit system supports all major UMTS frequency bands and is comprised of the RF6280 (announced separately today), RF6281 and RF6285. The transmit system features a dedicated single-band power amplifier module (supporting Band I), a flexible dual-band power amplifier module (capable of supporting Bands I, II, III, IV, V, VI, VIII, IX) and a low-noise, high efficiency DC to DC converter/controller. The compact design of the RF628x transmit system enables a greater than 30% reduction in the implementation of tri-band UMTS solutions, including filtering, as compared to competitive solutions. RFMD’s transmit system offers best-in-class efficiency through the use of analog bias control and the RF6280 DC to DC converter/controller, which maximize efficiency across all power levels and data rates (voice-only to HSPA). This helps to extend talk time and reduces thermal dissipation, both of which are critical customer metrics.
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RF6280 Product Information Page
RF6281 Product Information Page
RF6285 Product Information Page
RF1450, RF1200
The RF1200 and RF1450 utilize RFMD’s industry-leading GaAs manufacturing capability and leverage the switch technology developed for use in RFMD’s transmit modules. These high performance switches enable front-end applications in multiple market segments, including multi-mode GSM / WCDMA cellular handsets, antenna tuners, IEEE802.11a/b/g WLAN and cellular infrastructure. The RF1200 is a single-pole double-throw (SPDT) high-power switch that meets all linearity requirements for WCDMA and features low insertion loss, low control voltage and very good harmonic characteristics. The RF1450 is a single-pole four-throw (SP4T) high-power switch specifically designed to provide superior linearity performance for multimode WCDMA applications.
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RF1200 Product Information Page
RF1450 Product Information Page
POLARIS
2 TOTAL RADIO Module
Based
on the POLARIS 2 TOTAL RADIO solution, the
POLARIS 2 TOTAL RADIO Module is a highly
integrated complete radio consisting of transceiver
and transmitter modules designed to support up to four
frequency bands while operating under the GSM, GPRS
and EDGE air interface standards. This solution consists
of the RF6026 radio transceiver module and the RF3178
transmitter module with integrated power control, antenna
switch and harmonic filters. The solution is Class 12
capable, includes enhanced receiver sensitivity and
the ability to receive and transmit 8-PSK modulated
signals for the EDGE air interface standard. The POLARIS
2 TOTAL RADIO Module provides handset manufacturers
the benefits of minimal size, reduced component count
and flexible baseband interfaces, reducing time to market
while still achieving exceptional RF performance, particularly
in sensitivity and low power consumption.
POLARIS
2 TOTAL RADIO Module Flyer
RF3178 Product Information Page
RF6026 Product Information Page
RF5924
Featuring
a WLAN power amplifier, switch and receive balun, the
RF5924 front-end module for embedded wireless LAN (WLAN)
applications provides all the required functions between
the RF transceiver and the system BPF/antenna. The device
requires no external components, which provides the
smallest footprint area of any 802.11g front-end module.
With all RF ports 50-ohm matched, the RF5924 is designed
to ease system implementation and reduce design cycle
time.
RF5924
Flyer
RF5924 Product Information Page
RF5198
The
RF5198 is the world's smallest high-power, high-efficiency
linear PA module with an on-chip power detector. The
device is manufactured on an advanced third generation
GaAs HBT process and is designed for use as the final
RF amplifier in 3V WCDMA handheld digital cellular equipment.
Featuring RF input and output terminals internally matched
to 50 ohms, the RF5198 is contained in a thermally efficient,
low-profile 3x3x0.9mm plastic package for cost-effectiveness.
RF5198
Flyer
RF5198 Product Information Page
RF3807
& RF3809
Developed
for cellular base station applications, the half-watt
RF3807 and two-watt RF3809 GaAs HBT pre-driver power
amplifiers offer broadband performance across CDMA,
GSM, DCS, PCS and UMTS frequencies, lowering the total
cost of implementation. Assembled in industry-standard
lead (pB)-free, thermally enhanced, plastic SOIC-8 packages
which provide low thermal resistance, these solutions
feature high linearity, high power-added efficiency
and broadband performance, providing functionality for
a variety of wireless applications.
RF3807 & RF3809
RF3807 Product Information Page
RF3809 Product Information Page
RF3158
RFMD's
next generation of industry-leading PowerStar® power
amplifier (PA) module solutions, the RF3158 measures
only 6x6x1.4mm, representing a greater than 30 percent
reduction in size versus the previous generation of
PowerStar PA modules. Developed for GSM/GPRS/EDGE applications,
this quad-band PA is optimized for linear EDGE using
either direct I&Q modulators or small signal polar
modulation. The RF3158 also features integrated battery
voltage (VBATT) tracking circuitry, which automatically
measures battery voltage and adjusts ramp voltage, thereby
preventing the power control loop from reaching saturation
during low voltage battery conditions.
RF3158
Flyer
RF3158 Product Information Page
RF3166
Optimized
for GSM/GPRS Class 12, the RF3166, RFMD's latest third-generation
PowerStar® power amplifier with integrated power
control, is designed to maximize transmitter yields
and minimize design time. Contained in an ultra-small
6x6x1.4mm package, the RF3166 is fully integrated and
requires no external routing or external components.
Featuring advanced circuit technology and VBATT tracking
circuit, the RF3166 improves transient spectrum performance
at low battery voltage conditions and has the ability
to optimize non 50-ohm performance.
RF3166
Flyer
RF3160 Product Information Page
RF3800
The
RF3800 series of GaAs HBT driver power amplifiers are
rugged, cost-effective, multi-band platform devices
for base station infrastructure applications ranging
from 450 MHz to 2200 MHz. Comprised of the RF3800, RF3802
and RF3806, the amplifiers offer higher breakdown voltage
and incorporate both base and emitter ballasting to
prevent thermal runaway at the 8-volt bias level. AlN
LCC-8 packaging makes the RF3800 series a more robust
alternative to lower-power plastic packaged pre-driver
amplifiers.
RF3800
Flyer
RF3800 Product Information Page
RF3802 Product Information Page
RF3806 Product Information Page
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